Characteristics of silicon nitride films deposited by cat-CVD at a low temperature (100 °)

Tae Ho Songa, Ki Su Keuma, Sin Young Kanga, Jung Hoon Parka, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Silicon nitride (SiNx) films for use as gate dielectric layers in thinfilm transistors (TFTs) were deposited by catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature (100 °C). Filament geometry, spacing between the filament and the substrate, and process pressure were optimized to deposit reliable dielectric films at 100 °C. Silane (SiH4), ammonia (NH3) and hydrogen (H2) were used as source gases, and the flow ratios of NH3 / SiH4 and H2 / SiH4 were varied from 10 to 60 and from 20 to 200, respectively. An in-situ chemical annealing was performed by using H 2 during the deposition process. As a result, SiNx films having a composition close to stoichiometry, having an electrical resistivity of 1012 ohmacm and a breakdown field strength of 7 MV/cm, were obtained. These films are believed to be applicable to TFTs on plastic substrates.

Original languageEnglish
Title of host publicationNanotechnology (General) - 221st ECS Meeting
PublisherElectrochemical Society Inc.
Pages5-8
Number of pages4
Edition25
ISBN (Electronic)9781623320447
ISBN (Print)9781623320447
DOIs
StatePublished - 2012
EventSymposium on Nanotechnology General Session - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number25
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Nanotechnology General Session - 221st ECS Meeting
Country/TerritoryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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