@inproceedings{a44331b4187c424e9b8a2f6079d1b3cb,
title = "Characteristics of silicon nitride films deposited by cat-CVD at a low temperature (100 °)",
abstract = "Silicon nitride (SiNx) films for use as gate dielectric layers in thinfilm transistors (TFTs) were deposited by catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature (100 °C). Filament geometry, spacing between the filament and the substrate, and process pressure were optimized to deposit reliable dielectric films at 100 °C. Silane (SiH4), ammonia (NH3) and hydrogen (H2) were used as source gases, and the flow ratios of NH3 / SiH4 and H2 / SiH4 were varied from 10 to 60 and from 20 to 200, respectively. An in-situ chemical annealing was performed by using H 2 during the deposition process. As a result, SiNx films having a composition close to stoichiometry, having an electrical resistivity of 1012 ohmacm and a breakdown field strength of 7 MV/cm, were obtained. These films are believed to be applicable to TFTs on plastic substrates.",
author = "Songa, {Tae Ho} and Keuma, {Ki Su} and Kanga, {Sin Young} and Parka, {Jung Hoon} and Hong, {Wan Shick}",
year = "2012",
doi = "10.1149/04525.0005ecst",
language = "English",
isbn = "9781623320447",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "25",
pages = "5--8",
booktitle = "Nanotechnology (General) - 221st ECS Meeting",
address = "United States",
edition = "25",
note = "Symposium on Nanotechnology General Session - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",
}