Characteristics of silicon nitride films deposited by cat-CVD at a low temperature (100 °)

Engineering

• Characteristics 100%
• Substrates 100%
• Transistor 100%
• Chemical Vapor Deposition 100%
• Low-Temperature 100%
• Nitride 100%
• Deposited Film 100%
• Gate Dielectric 50%
• Vapor Deposition 50%
• Deposition Process 50%
• Annealing 50%
• Substrate Temperature 50%
• Dielectric Film 50%
• Field Strength 50%
• Dielectric Layer 50%
• Breakdown Field 50%

Material Science

• Temperature 100%
• Transistor 100%
• Chemical Vapor Deposition 100%
• Silicon Nitride 100%
• Dielectric Material 50%
• Gas 50%
• Plastics 50%
• Annealing 50%
• Mechanical Strength 50%
• Electrical Resistivity 50%
• Silane 50%