Characteristics of step-graded In xGa 1-xAs and InGaP ySb 1-y metamorphic buffer layers on GaAs substrates

J. Kirch; P. Dudley; T. Kim; K. Radavich; S. Ruder; L. J. Mawst; T. F. Kuech; S. D. Lalumondiere; Y. Sin; W. T. Lotshaw; S. C. Moss

Characteristics of step-graded In _xGa _1-xAs and InGaP _ySb _1-y metamorphic buffer layers on GaAs substrates

J. Kirch, P. Dudley, T. Kim, K. Radavich, S. Ruder, L. J. Mawst, T. F. Kuech, S. D. Lalumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Step-graded InGaP _ySb _1-y and In _xGa _1-xAs metamorphic buffer layer (MBL) structures are grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). AFM analysis indicates that graded group V InGaP _ySb _1-y MBLs exhibit significantly lower surface roughness (∼4.7nm) compared with more conventional graded group III In _xGa _1-xAs MBLs, which typically have rms surface roughness in the range of 7- 14nm. To reduce the surface roughness of the In _xGa _1-xAs MBL, a post growth Chemical-Mechanical Polishing (CMP) procedure is implemented. AFM image analysis indicates the CMP process is effective in reducing the step-graded In _xGa _1-xAs MBL surface roughness from ∼7.3 nm (as-grown) to 2.3 nm post CMP. Preliminary studies indicate that bulk InGaAs layers regrown on top of the MBL subjected to CMP exhibit improved static and transient PL characteristics compared with those deposited on as-grown MBLs.

Original language	English
Title of host publication	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
State	Published - 2011
Event	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany Duration: 22 May 2011 → 26 May 2011

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/Territory	Germany
City	Berlin
Period	22/05/11 → 26/05/11

Keywords

Defects
III-V semiconductors
Optical devices

Cite this

Kirch, J., Dudley, P., Kim, T., Radavich, K., Ruder, S., Mawst, L. J., Kuech, T. F., Lalumondiere, S. D., Sin, Y., Lotshaw, W. T., & Moss, S. C. (2011). Characteristics of step-graded In _xGa _1-xAs and InGaP _ySb _1-y metamorphic buffer layers on GaAs substrates. In 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 Article 5978326 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Kirch, J. ; Dudley, P. ; Kim, T. et al. / Characteristics of step-graded In _xGa _1-xAs and InGaP _ySb _1-y metamorphic buffer layers on GaAs substrates. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

@inproceedings{f1c0abc312874b12b5e3121cf4f4030a,

title = "Characteristics of step-graded In xGa 1-xAs and InGaP ySb 1-y metamorphic buffer layers on GaAs substrates",

abstract = "Step-graded InGaP ySb 1-y and In xGa 1-xAs metamorphic buffer layer (MBL) structures are grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). AFM analysis indicates that graded group V InGaP ySb 1-y MBLs exhibit significantly lower surface roughness (∼4.7nm) compared with more conventional graded group III In xGa 1-xAs MBLs, which typically have rms surface roughness in the range of 7- 14nm. To reduce the surface roughness of the In xGa 1-xAs MBL, a post growth Chemical-Mechanical Polishing (CMP) procedure is implemented. AFM image analysis indicates the CMP process is effective in reducing the step-graded In xGa 1-xAs MBL surface roughness from ∼7.3 nm (as-grown) to 2.3 nm post CMP. Preliminary studies indicate that bulk InGaAs layers regrown on top of the MBL subjected to CMP exhibit improved static and transient PL characteristics compared with those deposited on as-grown MBLs.",

keywords = "Defects, III-V semiconductors, Optical devices",

author = "J. Kirch and P. Dudley and T. Kim and K. Radavich and S. Ruder and Mawst, {L. J.} and Kuech, {T. F.} and Lalumondiere, {S. D.} and Y. Sin and Lotshaw, {W. T.} and Moss, {S. C.}",

year = "2011",

language = "English",

isbn = "9781457717536",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

booktitle = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011",

note = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 ; Conference date: 22-05-2011 Through 26-05-2011",

}

Kirch, J, Dudley, P, Kim, T, Radavich, K, Ruder, S, Mawst, LJ, Kuech, TF, Lalumondiere, SD, Sin, Y, Lotshaw, WT & Moss, SC 2011, Characteristics of step-graded In _xGa _1-xAs and InGaP _ySb _1-y metamorphic buffer layers on GaAs substrates. in 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011., 5978326, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, Germany, 22/05/11.

Characteristics of step-graded In _xGa _1-xAs and InGaP _ySb _1-y metamorphic buffer layers on GaAs substrates. / Kirch, J.; Dudley, P.; Kim, T. et al.
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. 5978326 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characteristics of step-graded In xGa 1-xAs and InGaP ySb 1-y metamorphic buffer layers on GaAs substrates

AU - Kirch, J.

AU - Dudley, P.

AU - Kim, T.

AU - Radavich, K.

AU - Ruder, S.

AU - Mawst, L. J.

AU - Kuech, T. F.

AU - Lalumondiere, S. D.

AU - Sin, Y.

AU - Lotshaw, W. T.

AU - Moss, S. C.

PY - 2011

Y1 - 2011

N2 - Step-graded InGaP ySb 1-y and In xGa 1-xAs metamorphic buffer layer (MBL) structures are grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). AFM analysis indicates that graded group V InGaP ySb 1-y MBLs exhibit significantly lower surface roughness (∼4.7nm) compared with more conventional graded group III In xGa 1-xAs MBLs, which typically have rms surface roughness in the range of 7- 14nm. To reduce the surface roughness of the In xGa 1-xAs MBL, a post growth Chemical-Mechanical Polishing (CMP) procedure is implemented. AFM image analysis indicates the CMP process is effective in reducing the step-graded In xGa 1-xAs MBL surface roughness from ∼7.3 nm (as-grown) to 2.3 nm post CMP. Preliminary studies indicate that bulk InGaAs layers regrown on top of the MBL subjected to CMP exhibit improved static and transient PL characteristics compared with those deposited on as-grown MBLs.

AB - Step-graded InGaP ySb 1-y and In xGa 1-xAs metamorphic buffer layer (MBL) structures are grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). AFM analysis indicates that graded group V InGaP ySb 1-y MBLs exhibit significantly lower surface roughness (∼4.7nm) compared with more conventional graded group III In xGa 1-xAs MBLs, which typically have rms surface roughness in the range of 7- 14nm. To reduce the surface roughness of the In xGa 1-xAs MBL, a post growth Chemical-Mechanical Polishing (CMP) procedure is implemented. AFM image analysis indicates the CMP process is effective in reducing the step-graded In xGa 1-xAs MBL surface roughness from ∼7.3 nm (as-grown) to 2.3 nm post CMP. Preliminary studies indicate that bulk InGaAs layers regrown on top of the MBL subjected to CMP exhibit improved static and transient PL characteristics compared with those deposited on as-grown MBLs.

KW - Defects

KW - III-V semiconductors

KW - Optical devices

UR - http://www.scopus.com/inward/record.url?scp=84863269084&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84863269084

SN - 9781457717536

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

Y2 - 22 May 2011 through 26 May 2011

ER -

Kirch J, Dudley P, Kim T, Radavich K, Ruder S, Mawst LJ et al. Characteristics of step-graded In _xGa _1-xAs and InGaP _ySb _1-y metamorphic buffer layers on GaAs substrates. In 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. 5978326. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).