Abstract
In the present study, thermal properties of the electroless-deposited Cu thin film were investigated. The Cu thin film of good adhesion was successfully deposited on the TaN barrier layer by a electroless deposition method. The multilayered structure of Cu/TaN/Si was prepared by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. In order to investigate the effect of post-heat treatment the specimen was annealed in H2 reduction atmosphere. Crystallization and agglomeration of the electroless-deposited Cu film occurred through annealing at H2 atmosphere and resulted in the decrease of film resistance. Thermal stability of Cu/TaN/Si system was maintained up to the annealing temperature of 600°C in H2 atmosphere above which the intermediate compound of Cu-Si was formed through diffusion into the TaN layer.
| Original language | English |
|---|---|
| Pages (from-to) | 681-684 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 449-452 |
| Issue number | II |
| DOIs | |
| State | Published - 2004 |
| Event | Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 5 Nov 2003 → 8 Nov 2003 |
Keywords
- Cu interconnect
- Electroless deposition
- Thermal property
- Thin film