Characteristiscs of nanocrystalline silicon films deposited by cat-CVD below 100 °

Tae Ho Song, Ki Su Keum, Sin Young Kang, Jung Hoon Park, Jin Hoon Kim, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Nanocrystalline Silicon (nc-Si) films were deposited by catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature (100 °C) for use as an active layer in bottom-gate thinfilm transistors (TFTs). Hydrogen dilution technique was attempted to increase the crystalline volume fraction (Xc). The hydrogen dilution ratio, RH=[H2]/[SiH4], was varied from 2 to 74. Xc of the nc-Si films was estimated by Raman spectrum. The incubation-layer thickness was estimated by transmission electron spectroscopy (TEM). Incubation layer was limited up to 5.26 nm and crystallinity was 71 %.

Original languageEnglish
Title of host publicationThin Film Transistors 11, TFT 2012
PublisherElectrochemical Society Inc.
Pages55-58
Number of pages4
Edition8
ISBN (Print)9781607683568
DOIs
StatePublished - 2013
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: 8 Oct 201210 Oct 2012

Publication series

NameECS Transactions
Number8
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
Country/TerritoryUnited States
CityHonolulu, HI
Period8/10/1210/10/12

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