@inproceedings{5480966c88654ff18924ec83428761b1,
title = "Characteristiscs of nanocrystalline silicon films deposited by cat-CVD below 100 °",
abstract = "Nanocrystalline Silicon (nc-Si) films were deposited by catalytic chemical vapor deposition (Cat-CVD) at a low substrate temperature (100 °C) for use as an active layer in bottom-gate thinfilm transistors (TFTs). Hydrogen dilution technique was attempted to increase the crystalline volume fraction (Xc). The hydrogen dilution ratio, RH=[H2]/[SiH4], was varied from 2 to 74. Xc of the nc-Si films was estimated by Raman spectrum. The incubation-layer thickness was estimated by transmission electron spectroscopy (TEM). Incubation layer was limited up to 5.26 nm and crystallinity was 71 %.",
author = "Song, {Tae Ho} and Keum, {Ki Su} and Kang, {Sin Young} and Park, {Jung Hoon} and Kim, {Jin Hoon} and Hong, {Wan Shick}",
year = "2013",
doi = "10.1149/05008.0055ecst",
language = "English",
isbn = "9781607683568",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "55--58",
booktitle = "Thin Film Transistors 11, TFT 2012",
address = "United States",
edition = "8",
note = "11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 ; Conference date: 08-10-2012 Through 10-10-2012",
}