Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy

S. J. Oh, C. Kang, I. H. Maeng, N. K. Cho, J. D. Song, W. J. Choi, J. I. Lee, J. H. Son

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have investigated the carrier capture behavior of n-type modulation-doped InAs/GaAs QDs using THz time-domain spectroscopy (THz TDS) in order to estimate the total number of electrons captured by the QDs. The THz transmission of the sample with QDs (#1) is larger than that of the sample without QDs (#2). From the THz waveforms and subsequent analysis, the #1 sample shows lower conductivity which is resulted from the smaller number of free carriers due to the capture by the QDs.

Original languageEnglish
Title of host publicationIRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics
Pages55
Number of pages1
DOIs
StatePublished - 2006
EventIRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics - Shanghai, China
Duration: 18 Sep 200622 Sep 2006

Publication series

NameIRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics

Conference

ConferenceIRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics
Country/TerritoryChina
CityShanghai
Period18/09/0622/09/06

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