Characterization of Metal Contacts to Two-Dimensional MoTe2

Min Hyeok Jo, Jae Cheol Shin, Jae Eik Kim, Jae Gyun Lee, Seung Gyun Lim, Hyeon Jun Park, Yeol Gi Choi, Dae Hwa Joung, Dong Hwan Kim, Tae Wan Kim

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Transition metal dichalcogenide (TMD) atomic layers are an atomically thin material in the form of MX2, where M is a transition metal atom (such as Mo or W) and X is a chalcogen atom (such as S, Se, or Te). Among them, MoTe2 is attractive because of its narrow band gap (i.e., ~ 1 eV), leading to optical and electrical applications such as field-effect transistors, photodetectors, lightemitting diodes, and photovoltaics. The TMD atomic layers, however, suffer from the extremely high contact resistance of the metal electrodes. The formation of a low-resistance ohmic contact is essential to achieving good device performance. Here, we examined the contact resistance of the two-dimensional MoTe2 atomic tri-layers from transmission line model (TLM) measurements. 2H-phase MoTe2 atomic tri-layers were synthesized on a silicon dioxide/silicon substrate by using metal-organic chemical vapor deposition. The TLM pattern was fabricated on the tri-layers to examine the specific contact resistance of metals. This method is highly effective for minimizing the contact resistance of TMD atomic layers.

Original languageEnglish
Pages (from-to)667-670
Number of pages4
JournalJournal of the Korean Physical Society
Issue number5
StatePublished - 1 Sep 2018


  • Contact resistance
  • MoTe
  • TMDs


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