@inproceedings{0981ecb03bbb473b9bfb1f0f4f08e542,
title = "Characterization of MFIS structure with Dy-doped ZrO 2 buffer layer",
abstract = "To evaluate the feasibility of DZO thin film as an insulating buffer layer for ferroelectric gate field effect transistors (Fe-FETs) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure, we fabricated DZO/Si and BLT/DZO/Si structures by a sol-gel method. Equivalent oxide thickness (EOT) values of the DZO thin films were about 12.4nm, 11.9nm, 11.2nm and 11.1 nm for 650°C, 700°C 750°C, and 800°C, respectively. Hysteresis was observed in all capacitance-voltage (C-V) curves of the DZO/Si structures, but hysteresis of the 750-°C-annealed film was negligible. The leakage current densities of the DZO thin films on Si showed the good characteristics regardless of the annealing temperature variations. The C-V characteristics of Au/300-nm-thick BLT/750-°C-annealed DZO/Si structure showed clockwise hysteresis loops, and the memory window width increased as the bias voltage increased. The maximum value of the memory window width was about 1.9 V at ±7 V.",
keywords = "BLT, DZO, Fe-FETs, MFIS",
author = "Im, {J. H.} and Ah, {G. Z.} and Han, {D. H.} and Park, {B. E.}",
year = "2011",
doi = "10.1063/1.3666690",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "947--948",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}