Abstract
Non-photolithographic organic thin film transistors (OTFTs) were fabricated using pentacene and SiNx films on p-Si (100) at room temperature to investigate both the effects of their device structure (two different types of OTFTs, top-electrode and bottom-electrode) and the pentacene film deposition-rate on their current-voltage characteristics. OTFTs of the top-electrode type were prepared by thermal evaporation at various deposition rates of 1, 3, 5 and 7 Å/s. The top-electrode OTFTs exhibited 40 times higher amount of currents than the bottom-electrode OTFTs at the same bias conditions. An optimum OTFT was obtained using 5 Å/s and exhibited the saturation current, ID of approximately 4 μA at a gate bias of -40 V along with the field effect mobility of ∼0.046 cm2/Vs and the on/off current ratio of ∼105.
Original language | English |
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Pages (from-to) | 492-496 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 420-421 |
DOIs | |
State | Published - 2 Dec 2002 |
Keywords
- Deposition rate
- Field-effect mobility
- Organic thin film transistors
- Pentacene
- Thermal evaporation