Charge carrier injection and transport associated with thermally generated cracks in a 6,13-bis(triisopropylsilylethynyl) pentacene thin-film transistor

Jin Hyuk Bae, Hyeok Kim, Gilles Horowitz, Sin Doo Lee

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We describe how the charge carrier injection and transport are influenced by thermal cracks in a 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene film in terms of the contact resistance and the channel resistance in a TIPS pentacene thin-film transistor (TFT). Through a post-thermal annealing (PTA) process at a certain temperature Ta, the high structural order of TIPS-pentacene molecules is produced without thermal cracks, the carrier mobility of the TIPS pentacene TFT is maximized, and both the contact resistance and the channel resistance are minimized. Our quantitative description of the relationship between the PTA treatment and the interfacial resistance behavior would provide a useful basis for understanding the thermal stability and the electrical performance of a solution-processed organic TFT.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalSolid-State Electronics
Volume63
Issue number1
DOIs
StatePublished - Sep 2011

Keywords

  • Carrier injection
  • Carrier transport
  • Crack
  • Interfacial resistance
  • Post-thermal annealing
  • TIPS-pentacene

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