Charge transport mechanism in metal-nitride-oxide-silicon structures

K. A. Nasyrov, V. A. Gritsenko, M. K. Kim, H. S. Chae, S. D. Chae, W. I. Ryu, J. H. Sok, J. W. Lee, B. M. Kim

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58 Scopus citations


A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.

Original languageEnglish
Pages (from-to)336-338
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2002


  • Dielectric materials
  • MNOS devices
  • Silicon nitride
  • Trap


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