Charge transport mechanism in metal-nitride-oxide-silicon structures

K. A. Nasyrov; V. A. Gritsenko; M. K. Kim; H. S. Chae; S. D. Chae; W. I. Ryu; J. H. Sok; J. W. Lee; B. M. Kim

doi:10.1109/LED.2002.1004227

Charge transport mechanism in metal-nitride-oxide-silicon structures

K. A. Nasyrov, V. A. Gritsenko, M. K. Kim, H. S. Chae, S. D. Chae, W. I. Ryu, J. H. Sok, J. W. Lee, B. M. Kim

Department of Physics

Research output: Contribution to journal › Letter › peer-review

58 Scopus citations

Abstract

A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.

Original language	English
Pages (from-to)	336-338
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	6
DOIs	https://doi.org/10.1109/LED.2002.1004227
State	Published - Jun 2002

Keywords

Dielectric materials
EEPROM
MNOS devices
Silicon nitride
Trap

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10.1109/LED.2002.1004227

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title = "Charge transport mechanism in metal-nitride-oxide-silicon structures",

abstract = "A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.",

keywords = "Dielectric materials, EEPROM, MNOS devices, Silicon nitride, Trap",

author = "Nasyrov, {K. A.} and Gritsenko, {V. A.} and Kim, {M. K.} and Chae, {H. S.} and Chae, {S. D.} and Ryu, {W. I.} and Sok, {J. H.} and Lee, {J. W.} and Kim, {B. M.}",

year = "2002",

month = jun,

doi = "10.1109/LED.2002.1004227",

language = "English",

volume = "23",

pages = "336--338",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Charge transport mechanism in metal-nitride-oxide-silicon structures

AU - Nasyrov, K. A.

AU - Gritsenko, V. A.

AU - Kim, M. K.

AU - Chae, H. S.

AU - Chae, S. D.

AU - Ryu, W. I.

AU - Sok, J. H.

AU - Lee, J. W.

AU - Kim, B. M.

PY - 2002/6

Y1 - 2002/6

N2 - A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.

AB - A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.

KW - Dielectric materials

KW - EEPROM

KW - MNOS devices

KW - Silicon nitride

KW - Trap

UR - http://www.scopus.com/inward/record.url?scp=0036610044&partnerID=8YFLogxK

U2 - 10.1109/LED.2002.1004227

DO - 10.1109/LED.2002.1004227

M3 - Letter

AN - SCOPUS:0036610044

SN - 0741-3106

VL - 23

SP - 336

EP - 338

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Charge transport mechanism in metal-nitride-oxide-silicon structures

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Keywords

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