@inproceedings{cdecc710b8264667a6bbd4811c383b8b,
title = "Charge trapping and memory behaviors of the ultra-thin SiN layer",
abstract = "In this study, we investigate the trap-based memory characteristics at sub-5 nm silicon nitride layer in the conventional oxide-nitride-oxide capacitors. As a result, based on the experimental data, sub 5-nm storage layer has considerable charge trapping capability and thus embodies nonvolatile memory operation.",
keywords = "Charge trapping, ONO capacitor, Silicon nitride layer",
author = "Li, {D. H.} and Y. Kim and Lee, {G. S.} and Kim, {D. H.} and Lee, {J. H.} and Park, {B. G.}",
year = "2011",
doi = "10.1063/1.3666672",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "911--912",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}