Chemical states and photoluminescence of Si0.3Ge 0.7-nitride film formed by N2+ gas

Y. M. Lee; S. H. Jang; M. Han; M. C. Jung

doi:10.1063/1.3641475

Chemical states and photoluminescence of Si_0.3Ge _0.7-nitride film formed by N₂⁺ gas

Y. M. Lee, S. H. Jang, M. Han, M. C. Jung

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigated chemical states and photoluminescence of Si _0.3Ge_0.7-nitride film with a surface that was modified by N₂ ion implantation and rapid thermal annealing (RTA). By increasing the implantation time, the chemical bonding between Si and Ge was directly broken, and subnitrides were formed. We also observed the N₂ vibration mode peak in the x-ray absorption spectra, but after RTA, this peak disappeared completely. SiNx was transformed to the stable Si₃N ₄. However, GeN_x with various chemical states, including Ge₃N₄ and nanocrystalline Ge, were formed. Photoluminescence observations at room temperature showed strong visible luminescence at wavelengths of 460 and 515 nm.

Original language	English
Article number	123103
Journal	Applied Physics Letters
Volume	99
Issue number	12
DOIs	https://doi.org/10.1063/1.3641475
State	Published - 19 Sep 2011

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title = "Chemical states and photoluminescence of Si0.3Ge 0.7-nitride film formed by N2+ gas",

abstract = "We investigated chemical states and photoluminescence of Si 0.3Ge0.7-nitride film with a surface that was modified by N2 ion implantation and rapid thermal annealing (RTA). By increasing the implantation time, the chemical bonding between Si and Ge was directly broken, and subnitrides were formed. We also observed the N2 vibration mode peak in the x-ray absorption spectra, but after RTA, this peak disappeared completely. SiNx was transformed to the stable Si3N 4. However, GeNx with various chemical states, including Ge3N4 and nanocrystalline Ge, were formed. Photoluminescence observations at room temperature showed strong visible luminescence at wavelengths of 460 and 515 nm.",

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AU - Lee, Y. M.

AU - Jang, S. H.

AU - Han, M.

AU - Jung, M. C.

PY - 2011/9/19

Y1 - 2011/9/19

N2 - We investigated chemical states and photoluminescence of Si 0.3Ge0.7-nitride film with a surface that was modified by N2 ion implantation and rapid thermal annealing (RTA). By increasing the implantation time, the chemical bonding between Si and Ge was directly broken, and subnitrides were formed. We also observed the N2 vibration mode peak in the x-ray absorption spectra, but after RTA, this peak disappeared completely. SiNx was transformed to the stable Si3N 4. However, GeNx with various chemical states, including Ge3N4 and nanocrystalline Ge, were formed. Photoluminescence observations at room temperature showed strong visible luminescence at wavelengths of 460 and 515 nm.

AB - We investigated chemical states and photoluminescence of Si 0.3Ge0.7-nitride film with a surface that was modified by N2 ion implantation and rapid thermal annealing (RTA). By increasing the implantation time, the chemical bonding between Si and Ge was directly broken, and subnitrides were formed. We also observed the N2 vibration mode peak in the x-ray absorption spectra, but after RTA, this peak disappeared completely. SiNx was transformed to the stable Si3N 4. However, GeNx with various chemical states, including Ge3N4 and nanocrystalline Ge, were formed. Photoluminescence observations at room temperature showed strong visible luminescence at wavelengths of 460 and 515 nm.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

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ER -

Chemical states and photoluminescence of Si_0.3Ge _0.7-nitride film formed by N₂⁺ gas

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