Coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs (001) substrates

H. S. Lee; H. S. Sohn; J. Y. Lee; K. H. Lee; Y. H. Kim; T. W. Kim; M. S. Kwon; H. L. Park

doi:10.1063/1.2195020

Coexistence of a phase separation and an ordered structure in Cd _xZn_1-xTe epilayers grown on GaAs (001) substrates

H. S. Lee
, H. S. Sohn
, J. Y. Lee
, K. H. Lee
, Y. H. Kim
, T. W. Kim
, M. S. Kwon
, H. L. Park

Department of Materials Science and Engineering

Kyungpook National University
Korea Advanced Institute of Science and Technology
Hanyang University
Yonsei University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The coexistence of a phase separation and an ordered structure in Cd _xZn_1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt -type and CuAu-I -type ordered structures, together with a spinodal-like phase separation were formed in the Cd _xZn_1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.

Original language	English
Article number	093512
Journal	Journal of Applied Physics
Volume	99
Issue number	9
DOIs	https://doi.org/10.1063/1.2195020
State	Published - 1 May 2006

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title = "Coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs (001) substrates",

abstract = "The coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt -type and CuAu-I -type ordered structures, together with a spinodal-like phase separation were formed in the Cd xZn1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.",

author = "Lee, \{H. S.\} and Sohn, \{H. S.\} and Lee, \{J. Y.\} and Lee, \{K. H.\} and Kim, \{Y. H.\} and Kim, \{T. W.\} and Kwon, \{M. S.\} and Park, \{H. L.\}",

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doi = "10.1063/1.2195020",

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T1 - Coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs (001) substrates

AU - Lee, H. S.

AU - Sohn, H. S.

AU - Lee, J. Y.

AU - Lee, K. H.

AU - Kim, Y. H.

AU - Kim, T. W.

AU - Kwon, M. S.

AU - Park, H. L.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - The coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt -type and CuAu-I -type ordered structures, together with a spinodal-like phase separation were formed in the Cd xZn1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.

AB - The coexistence of a phase separation and an ordered structure in Cd xZn1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt -type and CuAu-I -type ordered structures, together with a spinodal-like phase separation were formed in the Cd xZn1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.

UR - https://www.scopus.com/pages/publications/33646872492

U2 - 10.1063/1.2195020

DO - 10.1063/1.2195020

M3 - Article

AN - SCOPUS:33646872492

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 093512

ER -

Coexistence of a phase separation and an ordered structure in Cd _xZn_1-xTe epilayers grown on GaAs (001) substrates

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