Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

Sunghyun Woo; Jihwan Lee; Gyunseok Ryu; Myounggon Kang

doi:10.1109/JEDS.2025.3567077

Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

Sunghyun Woo
, Jihwan Lee
, Gyunseok Ryu
, Myounggon Kang

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, implemented in Verilog-A, captures the saturation polarization-electric field (P-E) hysteresis behavior of a ferroelectric capacitor. To validate the model, simulation results are compared between TCAD and SPICE. Under identical programming conditions, the proposed oxide/nitride/ferroelectric (O/N/F) structure demonstrates approximately 3 V higher channel potential than the conventional oxide/nitride/oxide (O/N/O) structure, resulting in improved programming accuracy and cell stability. In addition, SPICE simulations run over an hour faster than TCAD, making the model efficient for circuit-level analysis.

Original language	English
Pages (from-to)	427-430
Number of pages	4
Journal	IEEE Journal of the Electron Devices Society
Volume	13
DOIs	https://doi.org/10.1109/JEDS.2025.3567077
State	Published - 2025

Keywords

3D NAND flash memory
SPICE
TCAD
ferroelectric
natural local self-boosting (NLSB)

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10.1109/JEDS.2025.3567077

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title = "Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures",

abstract = "This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, implemented in Verilog-A, captures the saturation polarization-electric field (P-E) hysteresis behavior of a ferroelectric capacitor. To validate the model, simulation results are compared between TCAD and SPICE. Under identical programming conditions, the proposed oxide/nitride/ferroelectric (O/N/F) structure demonstrates approximately 3 V higher channel potential than the conventional oxide/nitride/oxide (O/N/O) structure, resulting in improved programming accuracy and cell stability. In addition, SPICE simulations run over an hour faster than TCAD, making the model efficient for circuit-level analysis.",

keywords = "3D NAND flash memory, SPICE, TCAD, ferroelectric, natural local self-boosting (NLSB)",

author = "Sunghyun Woo and Jihwan Lee and Gyunseok Ryu and Myounggon Kang",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2025",

doi = "10.1109/JEDS.2025.3567077",

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T1 - Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics

T2 - A Comparative Analysis of O/N/O and O/N/F Structures

AU - Woo, Sunghyun

AU - Lee, Jihwan

AU - Ryu, Gyunseok

AU - Kang, Myounggon

PY - 2025

Y1 - 2025

N2 - This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, implemented in Verilog-A, captures the saturation polarization-electric field (P-E) hysteresis behavior of a ferroelectric capacitor. To validate the model, simulation results are compared between TCAD and SPICE. Under identical programming conditions, the proposed oxide/nitride/ferroelectric (O/N/F) structure demonstrates approximately 3 V higher channel potential than the conventional oxide/nitride/oxide (O/N/O) structure, resulting in improved programming accuracy and cell stability. In addition, SPICE simulations run over an hour faster than TCAD, making the model efficient for circuit-level analysis.

AB - This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, implemented in Verilog-A, captures the saturation polarization-electric field (P-E) hysteresis behavior of a ferroelectric capacitor. To validate the model, simulation results are compared between TCAD and SPICE. Under identical programming conditions, the proposed oxide/nitride/ferroelectric (O/N/F) structure demonstrates approximately 3 V higher channel potential than the conventional oxide/nitride/oxide (O/N/O) structure, resulting in improved programming accuracy and cell stability. In addition, SPICE simulations run over an hour faster than TCAD, making the model efficient for circuit-level analysis.

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KW - TCAD

KW - ferroelectric

KW - natural local self-boosting (NLSB)

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DO - 10.1109/JEDS.2025.3567077

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

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Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

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Keywords

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