TY - GEN
T1 - Comparative analysis of trap-based program/erase behaviors with tunnel dielectric for SONOS flash memory
AU - Li, Dong Hua
AU - Kim, Yoon
AU - Park, Byung Gook
PY - 2010
Y1 - 2010
N2 - In this study, we comparatively analyze the trap-based memory operation characteristics with tunnel dielectric in Oxide-Nitride-Oxide (ONO) structure. Detailed analysis is focused on the difference between single and bandgap engineered (BE) tunnel dielectric by comparing the program/erase (P/E) and charge retention behaviors. As a result, bandgap engineered tunnel dielectric structure embodies both fast P/E speed and long-term charge retention characteristics which exhibit a possible solution for performance optimization in SONOS flash memory device.
AB - In this study, we comparatively analyze the trap-based memory operation characteristics with tunnel dielectric in Oxide-Nitride-Oxide (ONO) structure. Detailed analysis is focused on the difference between single and bandgap engineered (BE) tunnel dielectric by comparing the program/erase (P/E) and charge retention behaviors. As a result, bandgap engineered tunnel dielectric structure embodies both fast P/E speed and long-term charge retention characteristics which exhibit a possible solution for performance optimization in SONOS flash memory device.
UR - http://www.scopus.com/inward/record.url?scp=77951661287&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424670
DO - 10.1109/INEC.2010.5424670
M3 - Conference contribution
AN - SCOPUS:77951661287
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 256
EP - 257
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -