Abstract
Ferroelectric poly(vinyliden fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl metacrylate) (PMMA)-blended P(VDF-TrFE) thin films were deposited by spin coating on Pt/TiO2/SiO2/Si and SiO2/Si structures, and their characteristics were investigated by forming metal-ferroelectric-metal (MFM) capacitors and metal-ferroelectric-insulator- semiconductor (MFIS) diodes. It was found that the data retention characteristics of MFIS diodes were significantly improved by blending PMMA and P(VDF-TrFE) and by optimizing the insulating buffer layer thickness. Under the present conditions, the longest data retention time of 6h was obtained using a 1.5-nm-thick SiO2 buffer layer on Si.
Original language | English |
---|---|
Pages (from-to) | 09KA211-09KA214 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 48 |
Issue number | 9 Part 2 |
DOIs | |
State | Published - 2009 |