Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene)

Joo Won Yoon; Byung Eun Park; Hiroshi Ishiwara

doi:10.1143/JJAP.48.09KA21

Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene)

Joo Won Yoon, Byung Eun Park, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Tokyo Institute of Technology

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3 Scopus citations

Abstract

Ferroelectric poly(vinyliden fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl metacrylate) (PMMA)-blended P(VDF-TrFE) thin films were deposited by spin coating on Pt/TiO₂/SiO₂/Si and SiO₂/Si structures, and their characteristics were investigated by forming metal-ferroelectric-metal (MFM) capacitors and metal-ferroelectric-insulator- semiconductor (MFIS) diodes. It was found that the data retention characteristics of MFIS diodes were significantly improved by blending PMMA and P(VDF-TrFE) and by optimizing the insulating buffer layer thickness. Under the present conditions, the longest data retention time of 6h was obtained using a 1.5-nm-thick SiO₂ buffer layer on Si.

Original language	English
Pages (from-to)	09KA211-09KA214
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	48
Issue number	9 Part 2
DOIs	https://doi.org/10.1143/JJAP.48.09KA21
State	Published - 2009

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Yoon, J. W., Park, B. E., & Ishiwara, H. (2009). Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene). Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 48(9 Part 2), 09KA211-09KA214. https://doi.org/10.1143/JJAP.48.09KA21

Yoon, Joo Won ; Park, Byung Eun ; Ishiwara, Hiroshi. / Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene). In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2009 ; Vol. 48, No. 9 Part 2. pp. 09KA211-09KA214.

@article{737edf079c0b4647947d7e058b15d05d,

title = "Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene)",

abstract = "Ferroelectric poly(vinyliden fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl metacrylate) (PMMA)-blended P(VDF-TrFE) thin films were deposited by spin coating on Pt/TiO2/SiO2/Si and SiO2/Si structures, and their characteristics were investigated by forming metal-ferroelectric-metal (MFM) capacitors and metal-ferroelectric-insulator- semiconductor (MFIS) diodes. It was found that the data retention characteristics of MFIS diodes were significantly improved by blending PMMA and P(VDF-TrFE) and by optimizing the insulating buffer layer thickness. Under the present conditions, the longest data retention time of 6h was obtained using a 1.5-nm-thick SiO2 buffer layer on Si.",

author = "Yoon, {Joo Won} and Park, {Byung Eun} and Hiroshi Ishiwara",

year = "2009",

doi = "10.1143/JJAP.48.09KA21",

language = "English",

volume = "48",

pages = "09KA211--09KA214",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 Part 2",

}

Yoon, JW, Park, BE & Ishiwara, H 2009, 'Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene)', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 48, no. 9 Part 2, pp. 09KA211-09KA214. https://doi.org/10.1143/JJAP.48.09KA21

Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene). / Yoon, Joo Won; Park, Byung Eun; Ishiwara, Hiroshi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 48, No. 9 Part 2, 2009, p. 09KA211-09KA214.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene)

AU - Yoon, Joo Won

AU - Park, Byung Eun

AU - Ishiwara, Hiroshi

PY - 2009

Y1 - 2009

N2 - Ferroelectric poly(vinyliden fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl metacrylate) (PMMA)-blended P(VDF-TrFE) thin films were deposited by spin coating on Pt/TiO2/SiO2/Si and SiO2/Si structures, and their characteristics were investigated by forming metal-ferroelectric-metal (MFM) capacitors and metal-ferroelectric-insulator- semiconductor (MFIS) diodes. It was found that the data retention characteristics of MFIS diodes were significantly improved by blending PMMA and P(VDF-TrFE) and by optimizing the insulating buffer layer thickness. Under the present conditions, the longest data retention time of 6h was obtained using a 1.5-nm-thick SiO2 buffer layer on Si.

AB - Ferroelectric poly(vinyliden fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl metacrylate) (PMMA)-blended P(VDF-TrFE) thin films were deposited by spin coating on Pt/TiO2/SiO2/Si and SiO2/Si structures, and their characteristics were investigated by forming metal-ferroelectric-metal (MFM) capacitors and metal-ferroelectric-insulator- semiconductor (MFIS) diodes. It was found that the data retention characteristics of MFIS diodes were significantly improved by blending PMMA and P(VDF-TrFE) and by optimizing the insulating buffer layer thickness. Under the present conditions, the longest data retention time of 6h was obtained using a 1.5-nm-thick SiO2 buffer layer on Si.

UR - http://www.scopus.com/inward/record.url?scp=77952738239&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.09KA21

DO - 10.1143/JJAP.48.09KA21

M3 - Article

AN - SCOPUS:77952738239

SN - 0021-4922

VL - 48

SP - 09KA211-09KA214

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 9 Part 2

ER -

Yoon JW, Park BE, Ishiwara H. Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene). Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2009;48(9 Part 2):09KA211-09KA214. doi: 10.1143/JJAP.48.09KA21

Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene)

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