Comparison of ionic liquid and ion-gel top-gate mos₂ field-effect transistors

Polymer electrolytes and ionic liquids (ILs) have attracted significant interest in applications as gate dielectrics. In this study, we fabricated top-gated molybdenum disulfide (MoS₂) thin-film transistors using IL and ion-gel (IG) gate dielectrics. Room-temperature Raman spectra measurements indicated a dominant peak spectral emission at 358 cm⁻¹ (E¹2g^{) and 406.44 cm−1} (E_1g ) associated with bilayer MoS₂ films. The fabricated thin-film field-effect transistors (FET) with IG gate dielectric exhibited band transport with a highest mobility of 0.5 cm²/V⋅s, and a poor I_ON/I_OFF ratio of ~10. By contrast, the FET with IL gate dielectric exhibited a 3400 % improvement in terms of the mobility (17.9 cm²/V⋅s), and a 1000 % improvement of the I_ON/I_OFF ratio (~100).