Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system

Osung Kwon; Yoon Kim; Myounggon Kang; Sungjun Kim

doi:10.1016/j.apsusc.2021.150101

Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO₂/p-Si devices for neuromorphic system

Osung Kwon, Yoon Kim, Myounggon Kang, Sungjun Kim

Dongguk University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this study, we characterize Cu/SiN/SiO₂/Si devices with different dopant concentrations in the silicon surface for use as synaptic devices in neuromorphic systems. We verified the device stack by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). An abrupt change is observed in Cu/SiN/SiO₂/p⁺⁺-Si at positive SET and negative RESET values, where Cu diffusion is involved in the conducting path. On the other hand, abrupt SET and gradual RESET values are observed in Cu/SiN/SiO₂/p⁺⁺-Si at negative SET operation and positive RESET operation, when intrinsic resistive switching occurs in SiN. The Cu/SiN/SiO₂/p⁺-Si device shows gradual bipolar resistive switching with negative SET and positive RESET. Lower current switching and more gradual switching is possible in the Cu/SiN/SiO₂/p⁺-Si device due to the series resistance. Potentiation and depression of the Cu/SiN/SiO₂/p⁺-Si device can be more accurately controlled by pulses than is the case for the Cu/SiN/SiO₂/p⁺⁺-Si device. Moreover, we reveal that the Cu/SiN/SiO₂/p⁺-Si device is more suitable for use as a synaptic device than the Cu/SiN/SiO₂/p⁺⁺-Si device according to the MNIST pattern recognition test.

Original language	English
Article number	150101
Journal	Applied Surface Science
Volume	563
DOIs	https://doi.org/10.1016/j.apsusc.2021.150101
State	Published - 15 Oct 2021

Keywords

Metal-insulator-semiconductor
Neuromorphic simulation
Resistive switching
Silicon nitride
Synaptic device

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10.1016/j.apsusc.2021.150101

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title = "Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system",

abstract = "In this study, we characterize Cu/SiN/SiO2/Si devices with different dopant concentrations in the silicon surface for use as synaptic devices in neuromorphic systems. We verified the device stack by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). An abrupt change is observed in Cu/SiN/SiO2/p++-Si at positive SET and negative RESET values, where Cu diffusion is involved in the conducting path. On the other hand, abrupt SET and gradual RESET values are observed in Cu/SiN/SiO2/p++-Si at negative SET operation and positive RESET operation, when intrinsic resistive switching occurs in SiN. The Cu/SiN/SiO2/p+-Si device shows gradual bipolar resistive switching with negative SET and positive RESET. Lower current switching and more gradual switching is possible in the Cu/SiN/SiO2/p+-Si device due to the series resistance. Potentiation and depression of the Cu/SiN/SiO2/p+-Si device can be more accurately controlled by pulses than is the case for the Cu/SiN/SiO2/p++-Si device. Moreover, we reveal that the Cu/SiN/SiO2/p+-Si device is more suitable for use as a synaptic device than the Cu/SiN/SiO2/p++-Si device according to the MNIST pattern recognition test.",

keywords = "Metal-insulator-semiconductor, Neuromorphic simulation, Resistive switching, Silicon nitride, Synaptic device",

author = "Osung Kwon and Yoon Kim and Myounggon Kang and Sungjun Kim",

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year = "2021",

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T1 - Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system

AU - Kwon, Osung

AU - Kim, Yoon

AU - Kang, Myounggon

AU - Kim, Sungjun

PY - 2021/10/15

Y1 - 2021/10/15

N2 - In this study, we characterize Cu/SiN/SiO2/Si devices with different dopant concentrations in the silicon surface for use as synaptic devices in neuromorphic systems. We verified the device stack by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). An abrupt change is observed in Cu/SiN/SiO2/p++-Si at positive SET and negative RESET values, where Cu diffusion is involved in the conducting path. On the other hand, abrupt SET and gradual RESET values are observed in Cu/SiN/SiO2/p++-Si at negative SET operation and positive RESET operation, when intrinsic resistive switching occurs in SiN. The Cu/SiN/SiO2/p+-Si device shows gradual bipolar resistive switching with negative SET and positive RESET. Lower current switching and more gradual switching is possible in the Cu/SiN/SiO2/p+-Si device due to the series resistance. Potentiation and depression of the Cu/SiN/SiO2/p+-Si device can be more accurately controlled by pulses than is the case for the Cu/SiN/SiO2/p++-Si device. Moreover, we reveal that the Cu/SiN/SiO2/p+-Si device is more suitable for use as a synaptic device than the Cu/SiN/SiO2/p++-Si device according to the MNIST pattern recognition test.

AB - In this study, we characterize Cu/SiN/SiO2/Si devices with different dopant concentrations in the silicon surface for use as synaptic devices in neuromorphic systems. We verified the device stack by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). An abrupt change is observed in Cu/SiN/SiO2/p++-Si at positive SET and negative RESET values, where Cu diffusion is involved in the conducting path. On the other hand, abrupt SET and gradual RESET values are observed in Cu/SiN/SiO2/p++-Si at negative SET operation and positive RESET operation, when intrinsic resistive switching occurs in SiN. The Cu/SiN/SiO2/p+-Si device shows gradual bipolar resistive switching with negative SET and positive RESET. Lower current switching and more gradual switching is possible in the Cu/SiN/SiO2/p+-Si device due to the series resistance. Potentiation and depression of the Cu/SiN/SiO2/p+-Si device can be more accurately controlled by pulses than is the case for the Cu/SiN/SiO2/p++-Si device. Moreover, we reveal that the Cu/SiN/SiO2/p+-Si device is more suitable for use as a synaptic device than the Cu/SiN/SiO2/p++-Si device according to the MNIST pattern recognition test.

KW - Metal-insulator-semiconductor

KW - Neuromorphic simulation

KW - Resistive switching

KW - Silicon nitride

KW - Synaptic device

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ER -

Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO₂/p-Si devices for neuromorphic system

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