Comparison of various factors affected TID tolerance in FinFET and nanowire FET

Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (V_T). The channel insulator was composed of two materials, SiO₂ and HfO₂. To improve the accuracy of the simulation, the interfacial trap parameter of SiO₂ and HfO₂ was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less V_T shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the V_DD and channel doping.