Concurrent events of memory and threshold switching in Ag/SiNx/Si devices

Sungjun Kim; Min Hwi Kim; Tae Hyeon Kim; Ying Chen Chen; Yao Feng Chang; Muhammad Ismail; Yoon Kim; Kyung Chang Ryoo; Byung Gook Park

doi:10.1116/1.5034058

Concurrent events of memory and threshold switching in Ag/SiN_x/Si devices

Sungjun Kim, Min Hwi Kim, Tae Hyeon Kim, Ying Chen Chen, Yao Feng Chang, Muhammad Ismail, Yoon Kim, Kyung Chang Ryoo, Byung Gook Park

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiN_x/p⁺⁺-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 μA while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiN_x determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiN_x/p⁺⁺-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design.

Original language	English
Article number	051203
Journal	Journal of Vacuum Science and Technology B
Volume	36
Issue number	5
DOIs	https://doi.org/10.1116/1.5034058
State	Published - 1 Sep 2018

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abstract = "In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiNx/p++-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 μA while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiNx determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiNx/p++-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design.",

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AU - Kim, Sungjun

AU - Kim, Min Hwi

AU - Kim, Tae Hyeon

AU - Chen, Ying Chen

AU - Chang, Yao Feng

AU - Ismail, Muhammad

AU - Kim, Yoon

AU - Ryoo, Kyung Chang

AU - Park, Byung Gook

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N2 - In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiNx/p++-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 μA while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiNx determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiNx/p++-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design.

AB - In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiNx/p++-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 μA while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiNx determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiNx/p++-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design.

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Concurrent events of memory and threshold switching in Ag/SiN_x/Si devices

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