Cone-type SONOS flash memory

Gil Sung Lee; Jung Hoon Lee; Il Han Park; Seongjae Cho; Jang Gn Yun; Dong Hwa Li; Doo Hyun Kim; Yoon Kim; Se Hwan Park; Won Bo Shim; Wan Dong Kim; Jong Duk Lee; Hyungcheol Shin; Byung Gook Park

doi:10.1109/LED.2009.2033080

Cone-type SONOS flash memory

Gil Sung Lee
, Jung Hoon Lee
, Il Han Park
, Seongjae Cho
, Jang Gn Yun
, Dong Hwa Li
, Doo Hyun Kim
, Yoon Kim
, Se Hwan Park
, Won Bo Shim
, Wan Dong Kim
, Jong Duk Lee
, Hyungcheol Shin
, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.

Original language	English
Article number	5325791
Pages (from-to)	1332-1334
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	12
DOIs	https://doi.org/10.1109/LED.2009.2033080
State	Published - Dec 2009

Keywords

Cone type
Erase saturation
Field concentration
Retention
SONOS Flash memory

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10.1109/LED.2009.2033080

Cite this

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title = "Cone-type SONOS flash memory",

abstract = "A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.",

keywords = "Cone type, Erase saturation, Field concentration, Retention, SONOS Flash memory",

author = "Lee, \{Gil Sung\} and Lee, \{Jung Hoon\} and Park, \{Il Han\} and Seongjae Cho and Yun, \{Jang Gn\} and Li, \{Dong Hwa\} and Kim, \{Doo Hyun\} and Yoon Kim and Park, \{Se Hwan\} and Shim, \{Won Bo\} and Kim, \{Wan Dong\} and Lee, \{Jong Duk\} and Hyungcheol Shin and Park, \{Byung Gook\}",

year = "2009",

month = dec,

doi = "10.1109/LED.2009.2033080",

language = "English",

volume = "30",

pages = "1332--1334",

journal = "IEEE Electron Device Letters",

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T1 - Cone-type SONOS flash memory

AU - Lee, Gil Sung

AU - Lee, Jung Hoon

AU - Park, Il Han

AU - Cho, Seongjae

AU - Yun, Jang Gn

AU - Li, Dong Hwa

AU - Kim, Doo Hyun

AU - Kim, Yoon

AU - Park, Se Hwan

AU - Shim, Won Bo

AU - Kim, Wan Dong

AU - Lee, Jong Duk

AU - Shin, Hyungcheol

AU - Park, Byung Gook

PY - 2009/12

Y1 - 2009/12

N2 - A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.

AB - A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.

KW - Cone type

KW - Erase saturation

KW - Field concentration

KW - Retention

KW - SONOS Flash memory

UR - https://www.scopus.com/pages/publications/70549104870

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DO - 10.1109/LED.2009.2033080

M3 - Article

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SP - 1332

EP - 1334

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 5325791

ER -

Cone-type SONOS flash memory

Abstract

Keywords

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