Cone-type SONOS flash memory

Gil Sung Lee; Jung Hoon Lee; Il Han Park; Seongjae Cho; Jang Gn Yun; Dong Hwa Li; Doo Hyun Kim; Yoon Kim; Se Hwan Park; Won Bo Shim; Wan Dong Kim; Jong Duk Lee; Hyungcheol Shin; Byung Gook Park

doi:10.1109/LED.2009.2033080

Cone-type SONOS flash memory

Gil Sung Lee, Jung Hoon Lee, Il Han Park, Seongjae Cho, Jang Gn Yun, Dong Hwa Li, Doo Hyun Kim, Yoon Kim, Se Hwan Park, Won Bo Shim, Wan Dong Kim, Jong Duk Lee, Hyungcheol Shin, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.

Original language	English
Article number	5325791
Pages (from-to)	1332-1334
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	12
DOIs	https://doi.org/10.1109/LED.2009.2033080
State	Published - Dec 2009

Keywords

Cone type
Erase saturation
Field concentration
Retention
SONOS Flash memory

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10.1109/LED.2009.2033080

Cite this

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title = "Cone-type SONOS flash memory",

abstract = "A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.",

keywords = "Cone type, Erase saturation, Field concentration, Retention, SONOS Flash memory",

author = "Lee, \{Gil Sung\} and Lee, \{Jung Hoon\} and Park, \{Il Han\} and Seongjae Cho and Yun, \{Jang Gn\} and Li, \{Dong Hwa\} and Kim, \{Doo Hyun\} and Yoon Kim and Park, \{Se Hwan\} and Shim, \{Won Bo\} and Kim, \{Wan Dong\} and Lee, \{Jong Duk\} and Hyungcheol Shin and Park, \{Byung Gook\}",

year = "2009",

month = dec,

doi = "10.1109/LED.2009.2033080",

language = "English",

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pages = "1332--1334",

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T1 - Cone-type SONOS flash memory

AU - Lee, Gil Sung

AU - Lee, Jung Hoon

AU - Park, Il Han

AU - Cho, Seongjae

AU - Yun, Jang Gn

AU - Li, Dong Hwa

AU - Kim, Doo Hyun

AU - Kim, Yoon

AU - Park, Se Hwan

AU - Shim, Won Bo

AU - Kim, Wan Dong

AU - Lee, Jong Duk

AU - Shin, Hyungcheol

AU - Park, Byung Gook

PY - 2009/12

Y1 - 2009/12

N2 - A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.

AB - A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.

KW - Cone type

KW - Erase saturation

KW - Field concentration

KW - Retention

KW - SONOS Flash memory

UR - https://www.scopus.com/pages/publications/70549104870

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DO - 10.1109/LED.2009.2033080

M3 - Article

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EP - 1334

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 5325791

ER -

Cone-type SONOS flash memory

Abstract

Keywords

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