Abstract
We report on solution-processed light emitting field-effect transistors (LEFETs) that incorporate symmetric high work function (WF) source and drain metal electrodes. A key architectural design is the incorporation of a conjugated polyelectrolyte (CPE) electron injection layer atop the emissive layer. The device structure also comprises a hole-transporting layer underneath the emissive layer. Both holes and electrons are injected from stable, high WF metal though the CPE layer leading to electroluminescence near the electron-injecting electrode. With the benefits of the simplicity in device fabrication, the LEFETs incorporating CPEs are interesting structures for integrated organic optoelectronic devices.
| Original language | English |
|---|---|
| Article number | 043303 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 4 |
| DOIs | |
| State | Published - 26 Jul 2010 |
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