Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors

Keum Dong Jung; Byung Ju Kim; Byeong Ju Kim; Cheon An Lee; Dong Wook Park; Byung Gook Park; Hyungcheol Shin; Jong Duk Lee

doi:10.1109/SMELEC.2006.380696

Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors

Keum Dong Jung, Byung Ju Kim, Byeong Ju Kim, Cheon An Lee, Dong Wook Park, Byung Gook Park, Hyungcheol Shin, Jong Duk Lee

School of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C-V characteristics of organic MIS capacitors, these properties should be considered.

Original language	English
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	572-575
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2006.380696
State	Published - 2006
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: 29 Nov 2006 → 1 Dec 2006

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	29/11/06 → 1/12/06

Access to Document

10.1109/SMELEC.2006.380696

Cite this

Jung, K. D., Kim, B. J., Kim, B. J., Lee, C. A., Park, D. W., Park, B. G., Shin, H., & Lee, J. D. (2006). Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 572-575). Article 4266679 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.380696

@inproceedings{4e167edff20c4fd0b9decec7c7a1b7c7,

title = "Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors",

abstract = "C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C-V characteristics of organic MIS capacitors, these properties should be considered.",

author = "Jung, {Keum Dong} and Kim, {Byung Ju} and Kim, {Byeong Ju} and Lee, {Cheon An} and Park, {Dong Wook} and Park, {Byung Gook} and Hyungcheol Shin and Lee, {Jong Duk}",

year = "2006",

doi = "10.1109/SMELEC.2006.380696",

language = "English",

isbn = "0780397312",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "572--575",

booktitle = "ICSE 2006",

note = "2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 ; Conference date: 29-11-2006 Through 01-12-2006",

}

Jung, KD, Kim, BJ, Kim, BJ, Lee, CA, Park, DW, Park, BG, Shin, H & Lee, JD 2006, Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266679, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 572-575, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 29/11/06. https://doi.org/10.1109/SMELEC.2006.380696

Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors. / Jung, Keum Dong; Kim, Byung Ju; Kim, Byeong Ju et al.
ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 572-575 4266679 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors

AU - Jung, Keum Dong

AU - Kim, Byung Ju

AU - Kim, Byeong Ju

AU - Lee, Cheon An

AU - Park, Dong Wook

AU - Park, Byung Gook

AU - Shin, Hyungcheol

AU - Lee, Jong Duk

PY - 2006

Y1 - 2006

N2 - C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C-V characteristics of organic MIS capacitors, these properties should be considered.

AB - C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C-V characteristics of organic MIS capacitors, these properties should be considered.

UR - http://www.scopus.com/inward/record.url?scp=35148856769&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.380696

DO - 10.1109/SMELEC.2006.380696

M3 - Conference contribution

AN - SCOPUS:35148856769

SN - 0780397312

SN - 9780780397316

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 572

EP - 575

BT - ICSE 2006

T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006

Y2 - 29 November 2006 through 1 December 2006

ER -

Jung KD, Kim BJ, Kim BJ, Lee CA, Park DW, Park BG et al. Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 572-575. 4266679. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). doi: 10.1109/SMELEC.2006.380696

Considerations on the C-V characteristics of pentacene metal-insulator- semiconductor capacitors

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this