Control of silicidation in HfO2/Si(100) interfaces

Deok Yong Cho, Kee Shik Park, B. H. Choi, S. J. Oh, Y. J. Chang, D. H. Kim, T. W. Noh, Ranju Jung, Jae Cheol Lee, S. D. Bu

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The interfacial states of the HfO2 thin film grown on the Si(100) substrate by the pulsed laser deposition method is investigated in situ using x-ray photoelectron spectroscopy. They are found to depend on the HfO 2 film thickness, oxygen pressure during the pulsed laser deposition growth, and the deposition process. The hafnium suicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. The close relation between the silicide formation and abundance of the silicon suboxides at the interface is presented.

Original languageEnglish
Article number041913
Pages (from-to)041913-1-041913-3
JournalApplied Physics Letters
Issue number4
StatePublished - 2005


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