Correction to: Enhanced Charge Injection Properties of Organic Field-Effect Transistor by Molecular Implantation Doping (Advanced Materials, (2019), 31, 10, (1806697), 10.1002/adma.201806697)

The legends and captions for Figure S8b,c in the Supporting Information of the originally published article were found to be switched with each other. The corrected Figure S8 is shown below. 8 Figure (Figure presented.) a–c) The time evolution of transfer curves for the doped/unetched PBTTT transistor with channel length L_ch, of 50 µm (a); the doped/unetched PBTTT transistor with L_ch = 100 µm (b), the doped contact (doped/etched) PBTTT transistor with L_ch = 50 µm (c), and the doped contact PBTTT transistor with L_ch = 100 µm (d) over two months.