Correction to: Thickness-Dependent Electrical and Optoelectrical Properties of SnSe2 Field-Effect Transistors (Electronic Materials Letters, (2025), 21, 2, (154-161), 10.1007/s13391-025-00544-0)

In this article, the blank space between the equations was incorrectly denoted as ‘space’ in the following sentences. We calculated the threshold voltage (V_T) required to reach the off state using the equation I_DSspace= (WC_oxV_D/L) × (V_Gspace− V_T), The transconductance, C_ox = 1.15 ×space10^-8spaceF/cm² is the gate oxide capacitance per unit area, and V_D is the drain voltage. To analyze the carrier concentration quantitatively, conductivityspace(σ) and mobility (μ₀) values obtained from the output and transfer curves at zero gate voltage were used. The carrier concentration (n) increased from 1.48space×space10¹⁸ to 1.66space×space10¹⁹ cm^{− 3} (Fig. 4c). Where I_photospace= I_lightspace– I_dark is the generated photocurrent The correct sentences should have read as given below. We calculated the threshold voltage (V_T) required to reach the off state using the equation I_DS= (WC_oxV_D/L) × (V_G− V_T) The transconductance, C_ox = 1.15 × 10^{− 8} F/cm² is the gate oxide capacitance per unit area, and V_D is the drain voltage. To analyze the carrier concentration quantitatively, conductivity (σ) and mobility (μ₀) values obtained from the output and transfer curves at zero gate voltage were used. The carrier concentration (n) increased from 1.48 × 10¹⁸ to 1.66 × 10¹⁹ cm^{− 3} (Fig. 4c). Where I_photo= I_light– I_dark is the generated photocurrent. The original article has been corrected.