Creep behavior of a poled PZT wafer under longitudinal tensile stress and through thickness electric field

Sang Joo Kim, Chang Hoan Lee

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A commercially available soft PZT wafer that is poled in thickness direction is subjected to three different sets of loading environment, and variations of electric displacement in thickness direction and longitudinal/transverse strains are measured over time. Pure tensile stress creep experiments are made in short and open-circuit conditions. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. The material responses under pure antiparallel electric field load and combined load are compared with each other and the differences are explained by the opposite effects of longitudinal tensile stress on 90° domain switching.

Original languageEnglish
Pages (from-to)716-725
Number of pages10
JournalInternational Journal of Solids and Structures
Volume46
Issue number3-4
DOIs
StatePublished - Feb 2009

Keywords

  • Creep
  • Domain switching
  • Electric field
  • PZT wafer
  • Tensile stress

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