Creep behavior of a PZT wafer under tensile stress: Experiments and modeling

Kim Sang-Joo, Lee Chang-Hoan

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


A commercially available soft PZT wafer that is poled in thickness direction is subjected to longitudinal tensile stress loading in both short and open-circuit conditions. Variations of electric displacement in thickness direction and in-plane strains are measured over time during the loading. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. Finally, a free energy model of normal distribution is introduced to explain the observed creep behavior, and its predictions are compared with experimental observations.

Original languageEnglish
Pages (from-to)61-65
Number of pages5
JournalTransactions of the Korean Society of Mechanical Engineers, A
Issue number1
StatePublished - Jan 2010


  • Constitutive model
  • Creep
  • Domain switching
  • Normal distribution
  • PZT wafer(PZT)
  • Tensile load


Dive into the research topics of 'Creep behavior of a PZT wafer under tensile stress: Experiments and modeling'. Together they form a unique fingerprint.

Cite this