Creep behavior of a PZT wafer under tensile stress: Experiments and modeling

Kim Sang-Joo; Lee Chang-Hoan

doi:10.3795/KSME-A.2010.34.1.61

Creep behavior of a PZT wafer under tensile stress: Experiments and modeling

Kim Sang-Joo, Lee Chang-Hoan

Department of Mechanical and Information Engineering

Korea Institute of Science and Technology Information

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A commercially available soft PZT wafer that is poled in thickness direction is subjected to longitudinal tensile stress loading in both short and open-circuit conditions. Variations of electric displacement in thickness direction and in-plane strains are measured over time during the loading. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. Finally, a free energy model of normal distribution is introduced to explain the observed creep behavior, and its predictions are compared with experimental observations.

Original language	English
Pages (from-to)	61-65
Number of pages	5
Journal	Transactions of the Korean Society of Mechanical Engineers, A
Volume	34
Issue number	1
DOIs	https://doi.org/10.3795/KSME-A.2010.34.1.61
State	Published - Jan 2010

Keywords

Constitutive model
Creep
Domain switching
Normal distribution
PZT wafer(PZT)
Tensile load

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10.3795/KSME-A.2010.34.1.61

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@article{c8f69df8ce3945ba8091942475094da9,

title = "Creep behavior of a PZT wafer under tensile stress: Experiments and modeling",

abstract = "A commercially available soft PZT wafer that is poled in thickness direction is subjected to longitudinal tensile stress loading in both short and open-circuit conditions. Variations of electric displacement in thickness direction and in-plane strains are measured over time during the loading. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. Finally, a free energy model of normal distribution is introduced to explain the observed creep behavior, and its predictions are compared with experimental observations.",

keywords = "Constitutive model, Creep, Domain switching, Normal distribution, PZT wafer(PZT), Tensile load",

author = "Kim Sang-Joo and Lee Chang-Hoan",

year = "2010",

month = jan,

doi = "10.3795/KSME-A.2010.34.1.61",

language = "English",

volume = "34",

pages = "61--65",

journal = "Transactions of the Korean Society of Mechanical Engineers, A",

issn = "1226-4873",

publisher = "Korean Society of Mechanical Engineers",

number = "1",

}

TY - JOUR

T1 - Creep behavior of a PZT wafer under tensile stress

T2 - Experiments and modeling

AU - Sang-Joo, Kim

AU - Chang-Hoan, Lee

PY - 2010/1

Y1 - 2010/1

N2 - A commercially available soft PZT wafer that is poled in thickness direction is subjected to longitudinal tensile stress loading in both short and open-circuit conditions. Variations of electric displacement in thickness direction and in-plane strains are measured over time during the loading. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. Finally, a free energy model of normal distribution is introduced to explain the observed creep behavior, and its predictions are compared with experimental observations.

AB - A commercially available soft PZT wafer that is poled in thickness direction is subjected to longitudinal tensile stress loading in both short and open-circuit conditions. Variations of electric displacement in thickness direction and in-plane strains are measured over time during the loading. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. Finally, a free energy model of normal distribution is introduced to explain the observed creep behavior, and its predictions are compared with experimental observations.

KW - Constitutive model

KW - Creep

KW - Domain switching

KW - Normal distribution

KW - PZT wafer(PZT)

KW - Tensile load

UR - http://www.scopus.com/inward/record.url?scp=75749117211&partnerID=8YFLogxK

U2 - 10.3795/KSME-A.2010.34.1.61

DO - 10.3795/KSME-A.2010.34.1.61

M3 - Article

AN - SCOPUS:75749117211

SN - 1226-4873

VL - 34

SP - 61

EP - 65

JO - Transactions of the Korean Society of Mechanical Engineers, A

JF - Transactions of the Korean Society of Mechanical Engineers, A

IS - 1

ER -

Creep behavior of a PZT wafer under tensile stress: Experiments and modeling

Abstract

Keywords

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