Crystal orientation effects on electronic and optical properties of wurtzite ZnO/MgZnO quantum well lasers

Seoung Hwan Park, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Crystal orientation effects on electronic and optical properties of ZnO/MgZnO QW structures are investigated by taking into account the non-Markovian gain model with many-body effects. These results are compared with those for GaN-based QW structures. In a range of small crystal angles, ZnO/MgZnO QW structures have a lower internal field than GaN/AlGaN and InGaN/GaN QW structures. However, ZnO/MgZnO QW structures show a larger internal field than GaN-based QW structures at crystal angles near θ =50°. The WZ ZnO/MgZnO QW structures are shown to have much larger optical gain than the GaN-based QW structures for small crystal angles. This is because WZ ZnO/MgZnO QW structures have larger matrix element and smaller effective masses than InGaN/GaN QW structures near the (0001) crystal orientation. On the other hand, in the case of the (101̄0) crystal orientation, the optical gain of ZnO/MgZnO QW structures becomes smaller than that of InGaN/GaN QW structures due to the increase of the effective mass. In addition, the ZnO/MgZnO QW structures have a maximum in the optical gain near θ =50°, which can be explained by the fact that the average hole effective mass increases although the matrix element at high carrier density is improved with increasing crystal angle.

Original languageEnglish
Pages (from-to)935-952
Number of pages18
JournalOptical and Quantum Electronics
Volume38
Issue number12-14
DOIs
StatePublished - Sep 2006

Keywords

  • AlGaN
  • Crystal orientation
  • GaN
  • Laser
  • MgZnO
  • Optical gain
  • Quantum well
  • ZnO
  • ZnO/MgZnO

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