Abstract
Abstract : ZnO thin films were deposited on Si(100) substrates at low temperatures (44°C-21°C) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UVabsorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at 44°C while stable crystallized ZnO films were deposited above 90°C. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than 90°C.
Original language | English |
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Pages (from-to) | 1109-1115 |
Number of pages | 7 |
Journal | Journal of Korean Institute of Metals and Materials |
Volume | 48 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2010 |
Keywords
- ALD
- Crystallinity
- Deposition
- Thin films
- X-ray diffraction