Crystallized nano-thick ZnO films with low temperature ALD process

Byungkwan Yu, Jeungjo Han, Ohsung Song

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Abstract : ZnO thin films were deposited on Si(100) substrates at low temperatures (44°C-21°C) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UVabsorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at 44°C while stable crystallized ZnO films were deposited above 90°C. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than 90°C.

Original languageEnglish
Pages (from-to)1109-1115
Number of pages7
JournalJournal of Korean Institute of Metals and Materials
Issue number12
StatePublished - Dec 2010


  • ALD
  • Crystallinity
  • Deposition
  • Thin films
  • X-ray diffraction


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