Cu-incorporation by melt-spinning in n-type Bi 2 Te 2.7 Se 0.3 alloys for low-temperature power generation

Minyoung Kim, Sang il Kim, Hyun joon Cho, Hyuna Mun, Hyun sik Kim, Jae Hong Lim, Sung Wng Kim, Kyu Hyoung Lee

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Herein, we report the enhanced thermoelectric performance of Cu incorporated Bi 2 Te 2.7 Se 0.3 prepared by melt spinning. The electronic transport properties were significantly improved by Cu incorporation due to the synergetic effect of carrier tuning, band modification, and electron-phonon transport control. The steady dimensionless thermoelectric figure of merit higher than 0.90 was achieved in the wide range of temperature range of 350–450 K for Cu 0.008 Bi 2 Te 2.7 Se 0.3 , which is ~30% enhancement in comparison with pristine Bi 2 Te 2.7 Se 0.3 . This result can lead to high thermoelectric power generation efficiency 4.2% at ΔT = 180 K.

Original languageEnglish
Pages (from-to)120-125
Number of pages6
JournalScripta Materialia
Volume167
DOIs
StatePublished - 1 Jul 2019

Keywords

  • Band modification
  • Bi Te Se
  • Carrier tuning
  • Cu incorporation
  • Thermoelectric

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