Abstract
Herein, we report the enhanced thermoelectric performance of Cu incorporated Bi 2 Te 2.7 Se 0.3 prepared by melt spinning. The electronic transport properties were significantly improved by Cu incorporation due to the synergetic effect of carrier tuning, band modification, and electron-phonon transport control. The steady dimensionless thermoelectric figure of merit higher than 0.90 was achieved in the wide range of temperature range of 350–450 K for Cu 0.008 Bi 2 Te 2.7 Se 0.3 , which is ~30% enhancement in comparison with pristine Bi 2 Te 2.7 Se 0.3 . This result can lead to high thermoelectric power generation efficiency 4.2% at ΔT = 180 K.
| Original language | English |
|---|---|
| Pages (from-to) | 120-125 |
| Number of pages | 6 |
| Journal | Scripta Materialia |
| Volume | 167 |
| DOIs | |
| State | Published - 1 Jul 2019 |
Keywords
- Band modification
- Bi Te Se
- Carrier tuning
- Cu incorporation
- Thermoelectric