Current stressing effects on the reliability of Cu pillar bump with shallow solder

Byoung Joon Kim, Myeong Hyeok Jeong, Jae Won Kim, Kiwook Lee, Jaedong Kim, Young Bae Park, Ohsung Song, Young Chang Joo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The intermetallic compound (IMC) growths of Cu pillar bump with shallow solder (thin Sn thickness) were investigated during annealing or current stressing condition. After reflow, only Cu6Sn5 was observed, but Cu3Sn formed and grew at Cu pillar/Cu 6Sn5 interface with increasing annealing and current stressing time. The kinetics of IMC growth changed when all Sn in Cu pillar bump was exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. Under current stressing condition, intermetallic compound growth was significantly enhanced mainly due to the joule heating effects. Kirkendall void was observed at the interface of Cu pillar/Cu3Sn and it affected the mechanical reliability of Cu pillar bumps, which was estimated by die shear test.

Original languageEnglish
Title of host publicationIPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits
DOIs
StatePublished - 2010
Event17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010 - Singapore, Singapore
Duration: 5 Jul 20109 Jul 2010

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010
Country/TerritorySingapore
CitySingapore
Period5/07/109/07/10

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