Deep understanding of retention characteristics in various conditions in sub 20-nm NAND flash memory

Kyunghwan Lee; Myounggon Kang; Hyungcheol Shin

doi:10.1166/jnn.2017.14041

Deep understanding of retention characteristics in various conditions in sub 20-nm NAND flash memory

Kyunghwan Lee, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

Abstract

Misunderstanding on apparent activation energy (E_aa) can cause serious error in the lifetime predictions of NAND flash memory. In this paper, we extract E_aa and investigate the abnormal retention characteristics in various conditions for sub 20-nm NAND flash memory. The results show that the contribution rate (CR) of the dominant mechanisms for total charge loss has non-uniform behavior according to the temperature. In high-temperature (HT) regime, the Nit recovery mechanism is dominant, while the TAT mechanism becomes dominant in low-temperature (LT) regime. This non-uniform behavior, especially the CR' trend of the TAT mechanism, makes the E_aa roll-off characteristics in the Arrhenius plot.

Original language	English
Pages (from-to)	3155-3159
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2017.14041
State	Published - 2017

Keywords

Activation Energy (E)
Arrhenius Model
Criterion of δV
Lifetime Estimation
P /E Cycling Stress
Probability level (P-level)
Retention Time

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10.1166/jnn.2017.14041

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title = "Deep understanding of retention characteristics in various conditions in sub 20-nm NAND flash memory",

abstract = "Misunderstanding on apparent activation energy (Eaa) can cause serious error in the lifetime predictions of NAND flash memory. In this paper, we extract Eaa and investigate the abnormal retention characteristics in various conditions for sub 20-nm NAND flash memory. The results show that the contribution rate (CR) of the dominant mechanisms for total charge loss has non-uniform behavior according to the temperature. In high-temperature (HT) regime, the Nit recovery mechanism is dominant, while the TAT mechanism becomes dominant in low-temperature (LT) regime. This non-uniform behavior, especially the CR' trend of the TAT mechanism, makes the Eaa roll-off characteristics in the Arrhenius plot.",

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author = "Kyunghwan Lee and Myounggon Kang and Hyungcheol Shin",

year = "2017",

doi = "10.1166/jnn.2017.14041",

language = "English",

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pages = "3155--3159",

journal = "Journal of Nanoscience and Nanotechnology",

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publisher = "American Scientific Publishers",

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T1 - Deep understanding of retention characteristics in various conditions in sub 20-nm NAND flash memory

AU - Lee, Kyunghwan

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017

Y1 - 2017

N2 - Misunderstanding on apparent activation energy (Eaa) can cause serious error in the lifetime predictions of NAND flash memory. In this paper, we extract Eaa and investigate the abnormal retention characteristics in various conditions for sub 20-nm NAND flash memory. The results show that the contribution rate (CR) of the dominant mechanisms for total charge loss has non-uniform behavior according to the temperature. In high-temperature (HT) regime, the Nit recovery mechanism is dominant, while the TAT mechanism becomes dominant in low-temperature (LT) regime. This non-uniform behavior, especially the CR' trend of the TAT mechanism, makes the Eaa roll-off characteristics in the Arrhenius plot.

AB - Misunderstanding on apparent activation energy (Eaa) can cause serious error in the lifetime predictions of NAND flash memory. In this paper, we extract Eaa and investigate the abnormal retention characteristics in various conditions for sub 20-nm NAND flash memory. The results show that the contribution rate (CR) of the dominant mechanisms for total charge loss has non-uniform behavior according to the temperature. In high-temperature (HT) regime, the Nit recovery mechanism is dominant, while the TAT mechanism becomes dominant in low-temperature (LT) regime. This non-uniform behavior, especially the CR' trend of the TAT mechanism, makes the Eaa roll-off characteristics in the Arrhenius plot.

KW - Activation Energy (E)

KW - Arrhenius Model

KW - Criterion of δV

KW - Lifetime Estimation

KW - P /E Cycling Stress

KW - Probability level (P-level)

KW - Retention Time

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DO - 10.1166/jnn.2017.14041

M3 - Article

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

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ER -

Deep understanding of retention characteristics in various conditions in sub 20-nm NAND flash memory

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Keywords

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