Depolarization effects in (1122̄) -oriented InGaN/GaN quantum well structures

Seoung Hwan Park, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

58 Scopus citations


Depolarization effects on electrical and optical properties of (11 2- 2) -oriented wurtzite (WU) InGaNGaN quantum well (QW) were investigated using the multiband effective-mass theory. These results are compared with those of (0001)- and (10 1- 0) -oriented WU InGaNGaN QW structures. The internal field is shown to become zero for (11 2- 2) crystal orientation near the crystal angle of 56°, irrespective of the In composition in the well. This is because the sum of the piezoelectric and spontaneous polarizations in the barrier is equal to that in the well. The optical gain of the (11 2- 2) -oriented QW is significantly larger than that of the (0001)-oriented QW. This is caused mainly by the increase of the optical matrix element due to the disappearance of the internal field. Also, the (11 2- 2) -oriented QW is found to have the optical gain comparable to that of the (10 1- 0) -oriented QW.

Original languageEnglish
Article number013505
JournalApplied Physics Letters
Issue number1
StatePublished - 2007


Dive into the research topics of 'Depolarization effects in (1122̄) -oriented InGaN/GaN quantum well structures'. Together they form a unique fingerprint.

Cite this