Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs

This work reports an effective technique that is proposed for the simultaneous extraction of the energy distribution of donor- and acceptor-like interface trap states [D_it,D(E) and D_it,A(E)] over a wide range of bandgap energies using a single current-voltage (I-V) measurement in vertically stacked silicon nanowire (Si-NW) gate-all-around field-effect transistors. In the proposed method, we analyzed D_it,D(E) and D_it,A(E) based on the trap-induced photoresponsive gate-induced drain leakage with sub-bandgap optical source (E_ph = hν < E_g) at V_GS ≪ V_FB and differential body factor technique in the subthreshold current at V_FB < V_GS < V_T, respectively.