Abstract
A low temperature doping technique to be applied in poly-Si TFT's on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 Ĉ, and a sheet resistance of as low as 300 O/sq. was obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 17-21 |
| Number of pages | 5 |
| Journal | Journal of Information Display |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2003 |
Keywords
- Doping
- Low-temperature
- Poly-Si
- Thin film transistor