Abstract
Recent advancements in wearable and flexible electronic devices have increased the demand for lightweight and mechanically flexible organic field-effect transistors (OFETs). OFETs offer key advantages over conventional inorganic counterparts, including low-temperature processing, cost-effectiveness, and mechanical conformability. Among the various types of OFETs, ambipolar OFETs are particularly promising because they can reduce the number of fabrication steps and associated costs. These devices transport both electrons and holes within a single channel, which simplifies circuit design and enables complementary logic with fewer components. However, these devices still face challenges owing to the imbalance in electron and hole transport. This imbalance often leads to asymmetric electrical characteristics and reduced overall performance, which limit the practical application of ambipolar OFETs in integrated circuits. Overcoming this issue requires careful material selection, interface engineering, and device architecture optimization. This review highlights the significance of ambipolar OFETs, discusses their fabrication methods, and outlines strategies by which to improve ambipolar performance.
| Original language | English |
|---|---|
| Pages (from-to) | 342-351 |
| Number of pages | 10 |
| Journal | Journal of Sensor Science and Technology |
| Volume | 34 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2025 |
Keywords
- Ambipolar organic transistor
- Charge transport
- Flexible electronics
- Memory device
- Organic inverter
- Phototransistor
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