TY - JOUR
T1 - Development of Organic Semiconductors Based on Quinacridone Derivatives for Organic Field-Effect Transistors
T2 - High-Voltage Logic Circuit Applications
AU - Jeong, Yong Jin
AU - Jeon, Jongwook
AU - Lee, Sangkug
AU - Kang, Myounggon
AU - Jhon, Heesauk
AU - Song, Ho Jun
AU - Park, Chan Eon
AU - An, Tae Kyu
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2017/5
Y1 - 2017/5
N2 - Poly[quinacridone-alt-quaterthiophene] (PQCQT) was synthesized, using a Suzuki coupling reaction, to investigate the potential of quinacridone derivatives as organic semiconductors in organic fieldeffect transistors (OFETs) and circuits. A PQCQT film annealed at 150 °C yielded quite high field-effect performances, including a hole mobility of 2.0 \times 10^{-2} cm2/(Vs). In addition, to confirm the feasibility of using PQCQT in high-voltage circuit applications, electrical behaviors of PQCQT-based OFETs were described by extracting the model parameters of the industry standard compact Berkeley short-channel IGFET model. From the developed OFET model parameter set, we successfully evaluated the circuit operation of a p-type organic inverter with a frequency of 45.5 kHz in an 80 V supply condition.
AB - Poly[quinacridone-alt-quaterthiophene] (PQCQT) was synthesized, using a Suzuki coupling reaction, to investigate the potential of quinacridone derivatives as organic semiconductors in organic fieldeffect transistors (OFETs) and circuits. A PQCQT film annealed at 150 °C yielded quite high field-effect performances, including a hole mobility of 2.0 \times 10^{-2} cm2/(Vs). In addition, to confirm the feasibility of using PQCQT in high-voltage circuit applications, electrical behaviors of PQCQT-based OFETs were described by extracting the model parameters of the industry standard compact Berkeley short-channel IGFET model. From the developed OFET model parameter set, we successfully evaluated the circuit operation of a p-type organic inverter with a frequency of 45.5 kHz in an 80 V supply condition.
KW - field-effect transistors
KW - high-voltage logic circuit
KW - Organic semiconductor
KW - short-channel IGFET model (BSIM)
UR - http://www.scopus.com/inward/record.url?scp=85019628334&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2017.2665638
DO - 10.1109/JEDS.2017.2665638
M3 - Article
AN - SCOPUS:85019628334
SN - 2168-6734
VL - 5
SP - 209
EP - 213
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
IS - 3
M1 - 7847326
ER -