DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

Myounggon Kang; Wookghee Hahn; Il Han Park; Juyoung Park; Youngsun Song; Hocheol Lee; Changgyu Eun; Sanghyun Ju; Kihwan Choi; Youngho Lim; Seunghyun Jang; Seongjae Cho; Byung Gook Park; Hyungcheol Shin

doi:10.1109/TED.2011.2161313

DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

Myounggon Kang, Wookghee Hahn, Il Han Park, Juyoung Park, Youngsun Song, Hocheol Lee, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Seunghyun Jang, Seongjae Cho, Byung Gook Park, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the V_TH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.

Original language	English
Article number	5970109
Pages (from-to)	3626-3629
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TED.2011.2161313
State	Published - Oct 2011

Keywords

Cell-to-cell interference
drain-induced barrier lowering (DIBL)
gate-induced drain leakage (GIDL)
hot-carrier injection (HCI)
nand string

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10.1109/TED.2011.2161313

Cite this

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title = "DIBL-induced program disturb characteristics in 32-nm NAND flash memory array",

abstract = "In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.",

keywords = "Cell-to-cell interference, drain-induced barrier lowering (DIBL), gate-induced drain leakage (GIDL), hot-carrier injection (HCI), nand string",

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language = "English",

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AU - Kang, Myounggon

AU - Hahn, Wookghee

AU - Park, Il Han

AU - Park, Juyoung

AU - Song, Youngsun

AU - Lee, Hocheol

AU - Eun, Changgyu

AU - Ju, Sanghyun

AU - Choi, Kihwan

AU - Lim, Youngho

AU - Jang, Seunghyun

AU - Cho, Seongjae

AU - Park, Byung Gook

AU - Shin, Hyungcheol

PY - 2011/10

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N2 - In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.

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KW - drain-induced barrier lowering (DIBL)

KW - gate-induced drain leakage (GIDL)

KW - hot-carrier injection (HCI)

KW - nand string

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DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

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Keywords

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