DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

Myounggon Kang; Wookghee Hahn; Il Han Park; Juyoung Park; Youngsun Song; Hocheol Lee; Changgyu Eun; Sanghyun Ju; Kihwan Choi; Youngho Lim; Seunghyun Jang; Seongjae Cho; Byung Gook Park; Hyungcheol Shin

doi:10.1109/TED.2011.2161313

DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

Myounggon Kang
, Wookghee Hahn
, Il Han Park
, Juyoung Park
, Youngsun Song
, Hocheol Lee
, Changgyu Eun
, Sanghyun Ju
, Kihwan Choi
, Youngho Lim
, Seunghyun Jang
, Seongjae Cho
, Byung Gook Park
, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the V_TH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.

Original language	English
Article number	5970109
Pages (from-to)	3626-3629
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TED.2011.2161313
State	Published - Oct 2011

Keywords

Cell-to-cell interference
drain-induced barrier lowering (DIBL)
gate-induced drain leakage (GIDL)
hot-carrier injection (HCI)
nand string

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10.1109/TED.2011.2161313

Cite this

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title = "DIBL-induced program disturb characteristics in 32-nm NAND flash memory array",

abstract = "In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.",

keywords = "Cell-to-cell interference, drain-induced barrier lowering (DIBL), gate-induced drain leakage (GIDL), hot-carrier injection (HCI), nand string",

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language = "English",

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AU - Kang, Myounggon

AU - Hahn, Wookghee

AU - Park, Il Han

AU - Park, Juyoung

AU - Song, Youngsun

AU - Lee, Hocheol

AU - Eun, Changgyu

AU - Ju, Sanghyun

AU - Choi, Kihwan

AU - Lim, Youngho

AU - Jang, Seunghyun

AU - Cho, Seongjae

AU - Park, Byung Gook

AU - Shin, Hyungcheol

PY - 2011/10

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N2 - In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.

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KW - drain-induced barrier lowering (DIBL)

KW - gate-induced drain leakage (GIDL)

KW - hot-carrier injection (HCI)

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ER -

DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

Abstract

Keywords

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