Abstract
We propose a new dimer-exchange mechanism for surfactant-mediated epitaxial growth of Ge on Si(001) surfaces based on first-principles total-energy calculations. We find that, on Si(001) covered by As surfactants, Ge dimers are formed not on As dimers but between As-dimer rows, and then substitute for the As atoms at subsurface sites. This exchange process leads to As-capped needlelike growth of Ge along {11̄0} direction which prevents islanding at high Ge coverage.
Original language | English |
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Pages (from-to) | 3190-3193 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 72 |
Issue number | 20 |
DOIs | |
State | Published - 1994 |