@inproceedings{307a7a4a90ef481695e3d0ce30b5eed0,
title = "Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application",
abstract = "We have investigated the growth by metalorganic vapor phase epitaxy (MOVPE) of multinary (four- and five- element) dilutenitride- antimonide materials on GaAs substrates. The lowest background carbon concentration (∼5 × 1016 cm-3) is observed in dilute-nitride materials grown at high temperature which do not contain Sb (i.e. InGaAsN). An increased depletion region width significantly improves the solar cell performance over that found from dilute-nitride cells grown at lower growth temperatures (∼525°C). The device performance of the single-junction solar cells with the low carbon background InGaAsN base region (InGaAsN/Ge double-junction solar cell) exhibit short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 (28.46) mA/cm2, 0.67 (0.9) V, 75.85 (72.8) %, and 13.2 (18.54) %, with anti-reflecting coating (ARC), respectively.",
author = "Mawst, {L. J.} and Kim, {T. W.} and H. Kim and Y. Kim and K. Kim and Lee, {J. J.} and Kuech, {T. F.} and Lingley, {Z. R.} and LaLumondiere, {S. D.} and Y. Sin and Lotshaw, {W. T.} and Moss, {S. C.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06607.0101ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "101--108",
editor = "Wang, {Y. L.} and V. Chakrapani and Anderson, {T. J.} and Zavada, {J. M.} and Abernathy, {D. C. R.} and Hite, {J. K.}",
booktitle = "State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015",
address = "United States",
edition = "7",
}