Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

L. J. Mawst, T. W. Kim, H. Kim, Y. Kim, K. Kim, J. J. Lee, T. F. Kuech, Z. R. Lingley, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We have investigated the growth by metalorganic vapor phase epitaxy (MOVPE) of multinary (four- and five- element) dilutenitride- antimonide materials on GaAs substrates. The lowest background carbon concentration (∼5 × 1016 cm-3) is observed in dilute-nitride materials grown at high temperature which do not contain Sb (i.e. InGaAsN). An increased depletion region width significantly improves the solar cell performance over that found from dilute-nitride cells grown at lower growth temperatures (∼525°C). The device performance of the single-junction solar cells with the low carbon background InGaAsN base region (InGaAsN/Ge double-junction solar cell) exhibit short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 (28.46) mA/cm2, 0.67 (0.9) V, 75.85 (72.8) %, and 13.2 (18.54) %, with anti-reflecting coating (ARC), respectively.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015
EditorsY. L. Wang, V. Chakrapani, T. J. Anderson, J. M. Zavada, D. C. R. Abernathy, J. K. Hite
PublisherElectrochemical Society Inc.
Pages101-108
Number of pages8
Edition7
ISBN (Electronic)9781607685975
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting - Chicago, United States
Duration: 24 May 201528 May 2015

Publication series

NameECS Transactions
Number7
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period24/05/1528/05/15

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