Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

L. J. Mawst; T. W. Kim; H. Kim; Y. Kim; K. Kim; J. J. Lee; T. F. Kuech; Z. R. Lingley; S. D. LaLumondiere; Y. Sin; W. T. Lotshaw; S. C. Moss

doi:10.1149/06607.0101ecst

Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

L. J. Mawst
, T. W. Kim
, H. Kim
, Y. Kim
, K. Kim
, J. J. Lee
, T. F. Kuech
, Z. R. Lingley
, S. D. LaLumondiere
, Y. Sin
, W. T. Lotshaw
, S. C. Moss

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We have investigated the growth by metalorganic vapor phase epitaxy (MOVPE) of multinary (four- and five- element) dilutenitride- antimonide materials on GaAs substrates. The lowest background carbon concentration (∼5 × 10¹⁶ cm^-3) is observed in dilute-nitride materials grown at high temperature which do not contain Sb (i.e. InGaAsN). An increased depletion region width significantly improves the solar cell performance over that found from dilute-nitride cells grown at lower growth temperatures (∼525°C). The device performance of the single-junction solar cells with the low carbon background InGaAsN base region (InGaAsN/Ge double-junction solar cell) exhibit short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 (28.46) mA/cm2, 0.67 (0.9) V, 75.85 (72.8) %, and 13.2 (18.54) %, with anti-reflecting coating (ARC), respectively.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015
Editors	Y. L. Wang, V. Chakrapani, T. J. Anderson, J. M. Zavada, D. C. R. Abernathy, J. K. Hite
Publisher	Electrochemical Society Inc.
Pages	101-108
Number of pages	8
Edition	7
ISBN (Electronic)	9781607685975
DOIs	https://doi.org/10.1149/06607.0101ecst
State	Published - 2015
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting - Chicago, United States Duration: 24 May 2015 → 28 May 2015

Publication series

Name	ECS Transactions
Number	7
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	24/05/15 → 28/05/15

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10.1149/06607.0101ecst

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Mawst, L. J., Kim, T. W., Kim, H., Kim, Y., Kim, K., Lee, J. J., Kuech, T. F., Lingley, Z. R., LaLumondiere, S. D., Sin, Y., Lotshaw, W. T., & Moss, S. C. (2015). Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application. In Y. L. Wang, V. Chakrapani, T. J. Anderson, J. M. Zavada, D. C. R. Abernathy, & J. K. Hite (Eds.), State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 (7 ed., pp. 101-108). (ECS Transactions; Vol. 66, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/06607.0101ecst

Mawst, L. J. ; Kim, T. W. ; Kim, H. et al. / Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application. State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015. editor / Y. L. Wang ; V. Chakrapani ; T. J. Anderson ; J. M. Zavada ; D. C. R. Abernathy ; J. K. Hite. 7. ed. Electrochemical Society Inc., 2015. pp. 101-108 (ECS Transactions; 7).

@inproceedings{307a7a4a90ef481695e3d0ce30b5eed0,

title = "Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application",

abstract = "We have investigated the growth by metalorganic vapor phase epitaxy (MOVPE) of multinary (four- and five- element) dilutenitride- antimonide materials on GaAs substrates. The lowest background carbon concentration (∼5 × 1016 cm-3) is observed in dilute-nitride materials grown at high temperature which do not contain Sb (i.e. InGaAsN). An increased depletion region width significantly improves the solar cell performance over that found from dilute-nitride cells grown at lower growth temperatures (∼525°C). The device performance of the single-junction solar cells with the low carbon background InGaAsN base region (InGaAsN/Ge double-junction solar cell) exhibit short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 (28.46) mA/cm2, 0.67 (0.9) V, 75.85 (72.8) \%, and 13.2 (18.54) \%, with anti-reflecting coating (ARC), respectively.",

author = "Mawst, \{L. J.\} and Kim, \{T. W.\} and H. Kim and Y. Kim and K. Kim and Lee, \{J. J.\} and Kuech, \{T. F.\} and Lingley, \{Z. R.\} and LaLumondiere, \{S. D.\} and Y. Sin and Lotshaw, \{W. T.\} and Moss, \{S. C.\}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",

year = "2015",

doi = "10.1149/06607.0101ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

pages = "101--108",

editor = "Wang, \{Y. L.\} and V. Chakrapani and Anderson, \{T. J.\} and Zavada, \{J. M.\} and Abernathy, \{D. C. R.\} and Hite, \{J. K.\}",

booktitle = "State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015",

address = "United States",

edition = "7",

}

Mawst, LJ, Kim, TW, Kim, H, Kim, Y, Kim, K, Lee, JJ, Kuech, TF, Lingley, ZR, LaLumondiere, SD, Sin, Y, Lotshaw, WT & Moss, SC 2015, Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application. in YL Wang, V Chakrapani, TJ Anderson, JM Zavada, DCR Abernathy & JK Hite (eds), State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015. 7 edn, ECS Transactions, no. 7, vol. 66, Electrochemical Society Inc., pp. 101-108, Symposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting, Chicago, United States, 24/05/15. https://doi.org/10.1149/06607.0101ecst

Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application. / Mawst, L. J.; Kim, T. W.; Kim, H. et al.
State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015. ed. / Y. L. Wang; V. Chakrapani; T. J. Anderson; J. M. Zavada; D. C. R. Abernathy; J. K. Hite. 7. ed. Electrochemical Society Inc., 2015. p. 101-108 (ECS Transactions; Vol. 66, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

AU - Mawst, L. J.

AU - Kim, T. W.

AU - Kim, H.

AU - Kim, Y.

AU - Kim, K.

AU - Lee, J. J.

AU - Kuech, T. F.

AU - Lingley, Z. R.

AU - LaLumondiere, S. D.

AU - Sin, Y.

AU - Lotshaw, W. T.

AU - Moss, S. C.

PY - 2015

Y1 - 2015

N2 - We have investigated the growth by metalorganic vapor phase epitaxy (MOVPE) of multinary (four- and five- element) dilutenitride- antimonide materials on GaAs substrates. The lowest background carbon concentration (∼5 × 1016 cm-3) is observed in dilute-nitride materials grown at high temperature which do not contain Sb (i.e. InGaAsN). An increased depletion region width significantly improves the solar cell performance over that found from dilute-nitride cells grown at lower growth temperatures (∼525°C). The device performance of the single-junction solar cells with the low carbon background InGaAsN base region (InGaAsN/Ge double-junction solar cell) exhibit short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 (28.46) mA/cm2, 0.67 (0.9) V, 75.85 (72.8) %, and 13.2 (18.54) %, with anti-reflecting coating (ARC), respectively.

AB - We have investigated the growth by metalorganic vapor phase epitaxy (MOVPE) of multinary (four- and five- element) dilutenitride- antimonide materials on GaAs substrates. The lowest background carbon concentration (∼5 × 1016 cm-3) is observed in dilute-nitride materials grown at high temperature which do not contain Sb (i.e. InGaAsN). An increased depletion region width significantly improves the solar cell performance over that found from dilute-nitride cells grown at lower growth temperatures (∼525°C). The device performance of the single-junction solar cells with the low carbon background InGaAsN base region (InGaAsN/Ge double-junction solar cell) exhibit short-circuit current density, open-circuit voltage, fill factor, and efficiency values of 26.05 (28.46) mA/cm2, 0.67 (0.9) V, 75.85 (72.8) %, and 13.2 (18.54) %, with anti-reflecting coating (ARC), respectively.

UR - https://www.scopus.com/pages/publications/84931093897

U2 - 10.1149/06607.0101ecst

DO - 10.1149/06607.0101ecst

M3 - Conference contribution

AN - SCOPUS:84931093897

T3 - ECS Transactions

SP - 101

EP - 108

BT - State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015

A2 - Wang, Y. L.

A2 - Chakrapani, V.

A2 - Anderson, T. J.

A2 - Zavada, J. M.

A2 - Abernathy, D. C. R.

A2 - Hite, J. K.

PB - Electrochemical Society Inc.

T2 - Symposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting

Y2 - 24 May 2015 through 28 May 2015

ER -

Mawst LJ, Kim TW, Kim H, Kim Y, Kim K, Lee JJ et al. Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application. In Wang YL, Chakrapani V, Anderson TJ, Zavada JM, Abernathy DCR, Hite JK, editors, State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015. 7 ed. Electrochemical Society Inc. 2015. p. 101-108. (ECS Transactions; 7). doi: 10.1149/06607.0101ecst

Dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

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