Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

Sung Min Joe; Ho Jung Kang; Nagyong Choi; Myounggon Kang; Byung Gook Park; Jong Ho Lee

doi:10.1109/TED.2016.2533019

Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

Sung Min Joe, Ho Jung Kang, Nagyong Choi, Myounggon Kang, Byung Gook Park, Jong Ho Lee

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n⁺ and p⁺ regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density (D_it) of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of 1 mV/decade.

Original language	English
Article number	7428923
Pages (from-to)	1533-1538
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	4
DOIs	https://doi.org/10.1109/TED.2016.2533019
State	Published - Apr 2016

Keywords

Feedback
NAND flash memory
steep slope devices
Thyristors

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10.1109/TED.2016.2533019

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title = "Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback",

abstract = "A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n+ and p+ regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density (Dit) of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of 1 mV/decade.",

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AU - Park, Byung Gook

AU - Lee, Jong Ho

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AB - A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n+ and p+ regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density (Dit) of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of 1 mV/decade.

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Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

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Keywords

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