Dirac nodal line and pseudo-gap in 1T-VS2 single crystal

  • Mincheol Kim
  • , Hyuk Jin Kim
  • , Byoung Ki Choi
  • , Tae Gyu Rhee
  • , Chris Jozwiak
  • , Aaron Bostwick
  • , Eli Rotenberg
  • , Sunghun Lee
  • , Young Jun Chang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Vanadium disulfide (VS2), one of transition metal dichalcogenide (TMDC) family, attracts elevated interests for its charge-density wave phase transition, ferromagnetism, optoelectronic switching, and catalytic reactivity, but the topological Dirac surface states have not been observed yet. Here we report the Dirac nodal line states of VS2 single crystals via angle-resolved photoemission spectroscopy (ARPES) measurements. ARPES analysis reveals that Dirac nodal line surface states are extended from the Μ point toward the Γ point with energy of −1.1 eV. Comparison with the other vanadium chalcogenides shows monotonic energy shift of the Dirac states depending on the spin-orbit coupling strength of the chalcogen atoms. Furthermore, we studied the temperature-dependence of pseudo gaps near both the M and Γ points. Our observations provide experimental evidence of topological electronic structures, contributing to the understanding of the correlated TMDC systems and their potential in switching devices, optical saturable absorber, and electrocatalysis.

Original languageEnglish
Pages (from-to)94-99
Number of pages6
JournalCurrent Applied Physics
Volume77
DOIs
StatePublished - Sep 2025

Keywords

  • Angle-resolved photoemission spectroscopy
  • Charge-density wave
  • Topological Dirac nodal line
  • Transition metal dichalcogenide
  • Vanadium disulfide

Fingerprint

Dive into the research topics of 'Dirac nodal line and pseudo-gap in 1T-VS2 single crystal'. Together they form a unique fingerprint.

Cite this