Direct bonding of Si wafer pairs with SiO2 and Si3N4 films with a fast linear annealing

Sang Hyun Lee; Ohsung Song; C. S. Yoon; C. K. Kim

doi:10.1016/S1369-8001(02)00059-8

Direct bonding of Si wafer pairs with SiO₂ and Si₃N₄ films with a fast linear annealing

Sang Hyun Lee, Ohsung Song, C. S. Yoon, C. K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

2000 Å-SiO₂/Si(1 0 0) and 560 Å-Si₃N₄/Si(1 0 0) wafers, that are 10 cm in diameter, were directly bonded using a rapid thermal annealing method, so-called fast linear annealing (FLA), in which two wafers scanned with a high-power halogen lamp. It was demonstrated that at lamp power of 550 W, corresponding to the surface temperature of ∼ 450°C, the measured bonded area was close to 100%. At the same lamp power, the bond strength of the SiO₂∥Si₃N₄ wafer pair reached 2500 mJ/m², which was attained only above 1000°C with conventional furnace annealing for 2 h. The results clearly show that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO₂ and Si₃N₄ films (Si/SiO₂∥Si₃N₄/Si) compared to the conventional method.

Original language	English
Pages (from-to)	519-524
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	5
Issue number	6
DOIs	https://doi.org/10.1016/S1369-8001(02)00059-8
State	Published - Dec 2002

Keywords

Bonding of Si wafer pairs with SiO and SiN films (Si/SiO∥SiN/Si)
Direct bonding
Fast linear annealing
Heterogeneous bonding

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10.1016/S1369-8001(02)00059-8

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title = "Direct bonding of Si wafer pairs with SiO2 and Si3N4 films with a fast linear annealing",

abstract = "2000 {\AA}-SiO2/Si(1 0 0) and 560 {\AA}-Si3N4/Si(1 0 0) wafers, that are 10 cm in diameter, were directly bonded using a rapid thermal annealing method, so-called fast linear annealing (FLA), in which two wafers scanned with a high-power halogen lamp. It was demonstrated that at lamp power of 550 W, corresponding to the surface temperature of ∼ 450°C, the measured bonded area was close to 100%. At the same lamp power, the bond strength of the SiO2∥Si3N4 wafer pair reached 2500 mJ/m2, which was attained only above 1000°C with conventional furnace annealing for 2 h. The results clearly show that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si3N4 films (Si/SiO2∥Si3N4/Si) compared to the conventional method.",

keywords = "Bonding of Si wafer pairs with SiO and SiN films (Si/SiO∥SiN/Si), Direct bonding, Fast linear annealing, Heterogeneous bonding",

author = "Lee, {Sang Hyun} and Ohsung Song and Yoon, {C. S.} and Kim, {C. K.}",

year = "2002",

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doi = "10.1016/S1369-8001(02)00059-8",

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TY - JOUR

T1 - Direct bonding of Si wafer pairs with SiO2 and Si3N4 films with a fast linear annealing

AU - Lee, Sang Hyun

AU - Song, Ohsung

AU - Yoon, C. S.

AU - Kim, C. K.

PY - 2002/12

Y1 - 2002/12

N2 - 2000 Å-SiO2/Si(1 0 0) and 560 Å-Si3N4/Si(1 0 0) wafers, that are 10 cm in diameter, were directly bonded using a rapid thermal annealing method, so-called fast linear annealing (FLA), in which two wafers scanned with a high-power halogen lamp. It was demonstrated that at lamp power of 550 W, corresponding to the surface temperature of ∼ 450°C, the measured bonded area was close to 100%. At the same lamp power, the bond strength of the SiO2∥Si3N4 wafer pair reached 2500 mJ/m2, which was attained only above 1000°C with conventional furnace annealing for 2 h. The results clearly show that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si3N4 films (Si/SiO2∥Si3N4/Si) compared to the conventional method.

AB - 2000 Å-SiO2/Si(1 0 0) and 560 Å-Si3N4/Si(1 0 0) wafers, that are 10 cm in diameter, were directly bonded using a rapid thermal annealing method, so-called fast linear annealing (FLA), in which two wafers scanned with a high-power halogen lamp. It was demonstrated that at lamp power of 550 W, corresponding to the surface temperature of ∼ 450°C, the measured bonded area was close to 100%. At the same lamp power, the bond strength of the SiO2∥Si3N4 wafer pair reached 2500 mJ/m2, which was attained only above 1000°C with conventional furnace annealing for 2 h. The results clearly show that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si3N4 films (Si/SiO2∥Si3N4/Si) compared to the conventional method.

KW - Bonding of Si wafer pairs with SiO and SiN films (Si/SiO∥SiN/Si)

KW - Direct bonding

KW - Fast linear annealing

KW - Heterogeneous bonding

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U2 - 10.1016/S1369-8001(02)00059-8

DO - 10.1016/S1369-8001(02)00059-8

M3 - Article

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SN - 1369-8001

VL - 5

SP - 519

EP - 524

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

Direct bonding of Si wafer pairs with SiO₂ and Si₃N₄ films with a fast linear annealing

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Keywords

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