Direct bonding of silicon pairs with heterogeneous insulator using different annealing methods

Ohsung Song; Kiyung Lee; C. S. Yoon; C. K. Kim

doi:10.1007/BF03027371

Direct bonding of silicon pairs with heterogeneous insulator using different annealing methods

Ohsung Song, Kiyung Lee, C. S. Yoon, C. K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We prepared SOI (silicon-on-insulator) wafer pairs of 2000 Å - SiO₂/Si(100) and 560 Å- Si₃N₄/Si(100) by CFA (Conventional electric Furnace Annealing), RTA (Rapid Thermal Annealing), and FLA (Fast Linear Annealing) at different annealing temperatures for each annealing process. We measured the bonding area and the bonding strength for the respective processes. It was demonstrated that the measured bonding area was close to 100% above 450°C for RTA, and 400°C for CFA. The maximum bond strength of the SiO₂/Si₃N₄ wafer pair was 2344,2300, and 195 mJ/m² for CFA, FLA, and RTA, respectively. We clearly demonstrated that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO₂ and Si ₃N₄films compared to the CFA and RTA methods.

Original language	English
Pages (from-to)	107-111
Number of pages	5
Journal	Metals and Materials International
Volume	10
Issue number	1
DOIs	https://doi.org/10.1007/BF03027371
State	Published - Feb 2004

Keywords

Bonding of Si wafer pairs with SiO and Si N films
Direct bonding
Fast linear annealing
Heterogeneous bonding

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10.1007/BF03027371

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title = "Direct bonding of silicon pairs with heterogeneous insulator using different annealing methods",

abstract = "We prepared SOI (silicon-on-insulator) wafer pairs of 2000 {\AA} - SiO2/Si(100) and 560 {\AA}- Si3N4/Si(100) by CFA (Conventional electric Furnace Annealing), RTA (Rapid Thermal Annealing), and FLA (Fast Linear Annealing) at different annealing temperatures for each annealing process. We measured the bonding area and the bonding strength for the respective processes. It was demonstrated that the measured bonding area was close to 100% above 450°C for RTA, and 400°C for CFA. The maximum bond strength of the SiO2/Si3N4 wafer pair was 2344,2300, and 195 mJ/m2 for CFA, FLA, and RTA, respectively. We clearly demonstrated that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si 3N4films compared to the CFA and RTA methods.",

keywords = "Bonding of Si wafer pairs with SiO and Si N films, Direct bonding, Fast linear annealing, Heterogeneous bonding",

author = "Ohsung Song and Kiyung Lee and Yoon, {C. S.} and Kim, {C. K.}",

year = "2004",

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doi = "10.1007/BF03027371",

language = "English",

volume = "10",

pages = "107--111",

journal = "Metals and Materials International",

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TY - JOUR

T1 - Direct bonding of silicon pairs with heterogeneous insulator using different annealing methods

AU - Song, Ohsung

AU - Lee, Kiyung

AU - Yoon, C. S.

AU - Kim, C. K.

PY - 2004/2

Y1 - 2004/2

N2 - We prepared SOI (silicon-on-insulator) wafer pairs of 2000 Å - SiO2/Si(100) and 560 Å- Si3N4/Si(100) by CFA (Conventional electric Furnace Annealing), RTA (Rapid Thermal Annealing), and FLA (Fast Linear Annealing) at different annealing temperatures for each annealing process. We measured the bonding area and the bonding strength for the respective processes. It was demonstrated that the measured bonding area was close to 100% above 450°C for RTA, and 400°C for CFA. The maximum bond strength of the SiO2/Si3N4 wafer pair was 2344,2300, and 195 mJ/m2 for CFA, FLA, and RTA, respectively. We clearly demonstrated that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si 3N4films compared to the CFA and RTA methods.

AB - We prepared SOI (silicon-on-insulator) wafer pairs of 2000 Å - SiO2/Si(100) and 560 Å- Si3N4/Si(100) by CFA (Conventional electric Furnace Annealing), RTA (Rapid Thermal Annealing), and FLA (Fast Linear Annealing) at different annealing temperatures for each annealing process. We measured the bonding area and the bonding strength for the respective processes. It was demonstrated that the measured bonding area was close to 100% above 450°C for RTA, and 400°C for CFA. The maximum bond strength of the SiO2/Si3N4 wafer pair was 2344,2300, and 195 mJ/m2 for CFA, FLA, and RTA, respectively. We clearly demonstrated that the FLA method is far superior in producing high-quality directly bonded Si wafer pairs with SiO2 and Si 3N4films compared to the CFA and RTA methods.

KW - Bonding of Si wafer pairs with SiO and Si N films

KW - Direct bonding

KW - Fast linear annealing

KW - Heterogeneous bonding

UR - http://www.scopus.com/inward/record.url?scp=11144301106&partnerID=8YFLogxK

U2 - 10.1007/BF03027371

DO - 10.1007/BF03027371

M3 - Article

AN - SCOPUS:11144301106

SN - 1598-9623

VL - 10

SP - 107

EP - 111

JO - Metals and Materials International

JF - Metals and Materials International

IS - 1

ER -

Direct bonding of silicon pairs with heterogeneous insulator using different annealing methods

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Keywords

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