Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200) K

Hwan Kim Tae; Min Lee Kyoung; Hwang Jaedam; Shick Hong Wan

Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200) K

Hwan Kim Tae, Min Lee Kyoung, Hwang Jaedam, Shick Hong Wan

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to journal › Conference article › peer-review

Abstract

We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

Original language	English
Pages (from-to)	261-263
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	8
State	Published - 2008
Event	8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of Duration: 13 Oct 2008 → 17 Oct 2008

Keywords

As-deposited nano crystalline silicon
Catalytic CVD (HWCVD)
Incubation layer
Low temperature

Cite this

@article{43129059f81c48a28cdcc6a8d9bda781,

title = "Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200) K",

abstract = "We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 \% crystallinity in 18 minutes.",

keywords = "As-deposited nano crystalline silicon, Catalytic CVD (HWCVD), Incubation layer, Low temperature",

author = "Tae, \{Hwan Kim\} and Kyoung, \{Min Lee\} and Hwang Jaedam and Wan, \{Shick Hong\}",

year = "2008",

language = "English",

volume = "8",

pages = "261--263",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 ; Conference date: 13-10-2008 Through 17-10-2008",

}

TY - JOUR

T1 - Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200) K

AU - Tae, Hwan Kim

AU - Kyoung, Min Lee

AU - Jaedam, Hwang

AU - Wan, Shick Hong

PY - 2008

Y1 - 2008

N2 - We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

AB - We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

KW - As-deposited nano crystalline silicon

KW - Catalytic CVD (HWCVD)

KW - Incubation layer

KW - Low temperature

UR - https://www.scopus.com/pages/publications/65649115019

M3 - Conference article

AN - SCOPUS:65649115019

SN - 1738-7558

VL - 8

SP - 261

EP - 263

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008

Y2 - 13 October 2008 through 17 October 2008

ER -

Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200) K

Abstract

Keywords

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