Direct deposition of poly-Si Films at a High Rate by Using Catalytic CVD at a low temperature (180 °C)

We studied direct deposition of poly-Si films by using catalytic chemical vapor deposition (CVD) at a low temperature (180 °C). An optimum arrangement of the catalyst wire was investigated. A high deposition rate (300 Å/min) and good adhesion were achieved by controlling the chamber pressure and the gas flow rate. As-deposited films also exhibited a crystalline volume fraction as high as 70 %. We accomplished a high deposition rate, a high crystallinity and a low substrate temperature simultaneously for deposition on plastic substrates.